Scientific Helios 5 HX FIB-SEM

The Thermo Fisher Scientific Helios 5 HX is a focused ion beam - scanning electron microscope (FIB-SEM). The Helios 5 HX combines focused ion beam and scanning electron microscope functions in a single instrument. The Helios 5 HX accepts 12-inch wafers.^[1]

FIB-SEM systems operate by scanning a focused ion beam over a sample surface to remove material by sputtering. The scanning electron microscope column provides high-resolution imaging of the surface and of freshly milled cross-sections. The electron column and the ion column are angled toward a common point on the sample, and the sample stage positions the region of interest at that point.

Ion milling can be combined with gas-assisted processes for enhanced etching or for local deposition of material. Gas injection systems introduce precursor gases near the sample surface during milling or deposition. Imaging with the electron beam is generally non-destructive, allowing repeated observation of a prepared site.

FIB-SEM tools sit outside the main deposition, lithography, and etch sequence of semiconductor manufacturing. The instruments are used after processing to inspect completed structures, to localize defects, and to prepare samples for further analysis. In a metrology and inspection role, the same tool can image a site, cut a cross-section, and measure the exposed structure.

Upstream steps include wafer fabrication operations that create the structures to be examined. Downstream steps include data review, defect classification, and additional analysis on other instruments. FIB-SEM work typically occurs when a device or test structure must be examined at a specific location.

FIB-SEM tools are used for semiconductor failure analysis, defect root-cause investigation, and process development. Physical cross-sectioning exposes buried features for imaging and measurement. Site-specific sample preparation for transmission electron microscopy is another common task.

Materials commonly examined include semiconductors, metals, dielectrics, and thin-film stacks. The focused ion beam can also be used for circuit modification, such as cutting conductors and depositing local connections. The same capabilities support both analytical and small-scale prototyping activities.