Mattson

Aspen

DepositionProduced 1990–Mattson Aspen family

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The Mattson Aspen is a family of plasma processing systems for strip, etch, and deposition. The Aspen II is a strip and etch system introduced in 1990. The Aspen III is a strip, etch, and CVD system supporting 200mm and 300mm wafers.^[1]^[2]

Aspen — Inventory photo — Fig. 01AspenInventory photo^[4]

Produced

1990–

Vacuum

Low pressure (5 mT to 300 mT)^[1]

What it is

The Mattson Aspen is a semiconductor deposition system in the Aspen family. The Mattson Aspen CVD variant is a chemical vapor deposition tool.^[4]^[1]^[2]

The Aspen III CVD is a bridge tool for dielectric film deposition and silane-based film deposition. The Aspen III CVD is a plasma enhanced chemical vapor deposition system.^[2]

How it works

The Aspen III CVD uses one, two, or three process chambers. The Aspen III CVD uses a small volume chamber design and dual loadlocks.^[2]

The Aspen III platform supports 200 mm and 300 mm wafers. The Aspen III CVD can handle both wafer sizes without changing the process chamber.^[1]^[2]

Where it fits in the process flow

The Aspen CVD sits in the thin-film deposition stage of semiconductor manufacturing. The Aspen III CVD supports post-metallization processing because its PECVD operation runs at relatively low temperatures.^[2]

Applications

The Aspen III CVD deposits dielectric film and silane-based films. The Aspen III CVD offers plasma enhanced chemical vapor deposition applications.^[2]

What do the numbers mean?

Vacuum & pumping1

Pressure range (eHighlands chamber): Low pressure (5 mT to 300 mT)^[1]

Wafer handling6

Wafer size: 100 mm, 150 mm, 200 mm (Aspen II); 200 mm, 300 mm (Aspen III)^[1]
Process chamber configuration: Dual wafer chamber design; single or dual process chambers (Aspen II); one, two, or three process chambers (Aspen III)^[3]
Throughput (Aspen II strip): 90-130 wafers per hour with one chamber; 110-160 wafers per hour with two chambers^[3]
Throughput (Aspen III strip): ≥200 wafers per hour with three chambers^[3]
Throughput (Aspen III CVD): Up to 180 wafers per hour, depending on film type^[2]
Warped wafer handling: Supports warped (> 5 mm) wafers^[1]

Configuration & options4

Process type: Strip, etch, CVD (PECVD)^[2]
Temperature range (Aspen II ICP): 100°C to 250°C^[1]
Temperature range (eHighlands chamber): Low temperature (10°C to 80°C)^[1]
Installed base: More than 500 Aspen III systems installed worldwide; more than 1,000 Aspen II systems installed^[1]

Vintage & configurations

1990Aspen II introduced^[1]
The Aspen II was first introduced in 1990.
1997ICP introduced^[3]
ICP was introduced in 1997 to extend capability for removal of difficult residues.

Documented models & variants

Designation	Generation	Vintage	Changes	Source
Aspen II	—	1990	Based on highly reliable and productive system design; ICP source with grounded Faraday shield; dual wafer chamber design; wafer sizes 100, 150, 200 mm	mattson.com^[1]
Aspen II Strip	—	—	Strip system using Aspen II platform, with one or two processing chambers, dual wafer processing	semiconductoronline.com^[3]
Aspen II Silicon Soft Etch (SSE)	—	—	Isotropic etch with high percentage fluorine chemistry	mattson.com^[1]
Aspen III	—	—	Based on proprietary ICP source with grounded Faraday shield; handles 200 mm and 300 mm wafers; supports warped and translucent wafers; dual wafer chamber design	mattson.com^[1]
Aspen III Strip	—	—	Strip system using Aspen III platform, with one, two, or three processing chambers; dual wafer processing	semiconductoronline.com^[3]
Aspen III CVD	—	—	CVD system for dielectric and silane-based films, PECVD, handles 200mm and 300mm	semiconductoronline.com^[2]

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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

Pressure range (eHighlands chamber)Low pressure (5 mT to 300 mT)^[1]

Where are the manuals?

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Not publicly documented

Field notes

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Frequently asked questions

What wafer sizes does the Aspen III CVD support?

The Aspen III platform handles 200 mm and 300 mm wafers. The Aspen III CVD can process both sizes without changing the process chamber.^[1]^[2]

What films does the Aspen III CVD deposit?

The Aspen III CVD deposits dielectric film and silane-based films.^[2]

What process family does the Aspen III CVD use?

The Aspen III CVD offers plasma enhanced chemical vapor deposition applications.^[2]

How many process chambers can the Aspen III CVD use?

The Aspen III CVD can be configured with one, two, or three process chambers.^[2]

What process context is the Aspen III CVD suited for?

The Aspen III CVD runs at relatively low temperatures and is used after aluminum metallization layers are deposited on the wafer.^[2]

Not publicly documented

The following facts about the Aspen are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

The control-system platform and OS era of the Aspen are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the Aspen are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the Aspen is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the Aspen are on record.
Answerable by: an OEM parts catalog or a service engineer
No publicly hosted manuals, SOPs, or datasheets for the Aspen are on record.
Answerable by: university cleanroom staff or an OEM application specialist