Lam Research
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This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.
The system likely employs reactive ion etching (RIE) principles, where ions accelerate toward the wafer to enhance chemical etching. Process parameters such as gas chemistry, pressure, and RF power are adjusted to achieve the desired etch profile and selectivity for the specific material being etched.
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It is a dry etcher.[1]
The following facts about the Alliance 9100 PTX Dry are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Alliance 9100 PTX Dry are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the Alliance 9100 PTX Dry are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the Alliance 9100 PTX Dry are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the Alliance 9100 PTX Dry are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the Alliance 9100 PTX Dry is not on record.
Answerable by: an OEM datasheet or a fab qualification report
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Last updated Oct 11, 2026.
The Applied Materials 0010-47763 is an electrostatic chuck (ESC) assembly used in semiconductor etching processes.
The Applied Materials 0010-16392 is an electrostatic chuck assembly designed for 300 mm wafer processing, featuring a dual electrode configuration.
Oxford Instruments 100 ICP Fluorine is an inductively coupled plasma etcher for fluorine-based etching, supporting cryo DRIE and multiple etch gases including SF6 and C4F8.