JEOL

JBX-8100FS

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JEOL JBX-8100FS is a maskless lithograph ML2 type. The JBX-8100FS is based on a patented ZrO/W (Schottky) emitter.^[1]

JEOLJBX-8100FS

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Power

125 MHz^[2]

Optics

maskless lithograph ML2 type^[1]

How it works

The JBX-8100FS employs a spot beam writing method with vector scan and step-and-repeat stage movement. The electron optical column forms a Gaussian beam that is deflected across the substrate. Dynamic focus and stigmation control are applied across scan fields to maintain beam shape and position.^[2]^[5]

Applications

The JBX-8100FS is used for fabrication of advanced nanostructures, production of compound semiconductor devices, and applications such as holography, gray‑scale lithography, and micro‑lens arrays. The system supports both high-resolution and high-throughput exposure modes.^[2]^[4]

What do the numbers mean?

Power & electrical2

Accelerating voltage: 100 kV (G1); 100/50 kV (G2); 200/130/100/50 kV (G3)^[2]
Maximum scanning speed: 125 MHz^[2]

Wafer handling1

Substrate size: Maximum 200 mm φ wafer, 6 inch mask blanks, and micro sample pieces of any size^[2]

Optics & imaging9

machine type: maskless lithograph ML2 type^[1]
Field size (high resolution mode): 100 μm × 100 μm^[3]
Stage positioning resolution: 0.6 nm (standard); 0.15 nm (optional)^[2]
Overlay accuracy (high resolution mode): ≤±9 nm (G1/G2); ≤±8 nm (G3)^[2]
Overlay accuracy (high throughput mode): ≤±20 nm^[3]
Field stitching accuracy (high resolution mode): ≤±9 nm (G1/G2); ≤±8 nm (G3)^[2]
Field stitching accuracy (high throughput mode): ≤±20 nm^[3]
Minimum line width: 8 nm^[4]
Minimum step size: 0.5 nm^[4]

Performance1

Field size (high throughput mode): 1,000 μm × 1,000 μm (G1/G2); 2,000 μm × 2,000 μm (G3)^[2]

Dimensions & facilities1

Footprint (W × D × H): 4.9 m × 3.7 m × 2.6 m^[2]

Configuration & options7

emitter: patented ZrO/W (Schottky) emitter^[1]
Emitter type: ZrO/W (Schottky) emitter^[1]
Writing method: Spot beam, vector scan, step and repeat^[2]
Beam current range: 5 × 10⁻¹² to 2 × 10⁻⁷ A^[2]
Stage movable area: 190 mm × 170 mm^[2]
Power consumption (normal operation): Approximately 3 kVA^[2]
Electron source: ZrO/W (Schottky) thermal field emitter^[1]

Vintage & configurations

Documented models & variants

Designation	Generation	Vintage	Changes	Source
G1	—	—	Entry model; optional accessories can be added as needed.	jeol.com^[2]
G2	—	—	Full option model.	jeol.com^[2]
G3	—	—	200 kV model.	jeol.com^[2]

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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

Accelerating voltage100 kV (G1); 100/50 kV (G2); 200/130/100/50 kV (G3)^[2]
Maximum scanning speed125 MHz^[2]

Where are the manuals?

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Not publicly documented

Field notes

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Frequently asked questions

What is the maximum acceleration voltage of the JBX-8100FS?

The maximum acceleration voltage is 200 kV, available on the G3 version.^[2]^[4]

What is the minimum line width achievable with this system?

The minimum line width is 8 nm.^[4]

What substrate sizes can the JBX-8100FS accommodate?

The system can handle substrates up to 200 mm wafers and 6‑inch mask blanks.^[2]

What is the maximum scanning speed of the electron beam?

The maximum scanning speed is 125 MHz.^[2]^[4]

Not publicly documented

The following facts about the JBX-8100FS are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the JBX-8100FS are on record.
Answerable by: OEM historical records or a trade-press announcement
The control-system platform and OS era of the JBX-8100FS are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the JBX-8100FS are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the JBX-8100FS is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the JBX-8100FS are on record.
Answerable by: an OEM parts catalog or a service engineer

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Sources & citations

Sources (6)Every fact above is drawn from these public sources

[1]en.wikipedia.org — en.wikipedia.orgen.wikipedia.org
[2]jeol.com — jeol.comjeol.com
[3]jeolusa.com — jeolusa.comjeolusa.com
[4]ncfl.ictas.vt.edu — ncfl.ictas.vt.eduncfl.ictas.vt.edu
[5]E-Beam Lithography System - Advanced Nanofabrication Facility — nanofab.ubc.cananofab.ubc.ca
[6]JBX-8100FS - JEOL (Germany) GmbH and Nordic (AB) — jeol.dejeol.de