Comparison ledger
Applied Materials 0010-16392 ESC Assembly, SPTS uEtch, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-16392 ESC AssemblyApplied Materials | uEtchSPTS |
|---|---|---|
| OEM | Applied Materials | SPTS |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-16392 ESC Assembly | SPTS uEtch |
| Specifications | ||
| OEM | Applied Materials[1] | — |
| Model | 0010-16392[1] | — |
| Type | ESC Assembly[1] | — |
| Wafer Size | 300 mm[2] | — |
| Electrode Configuration | Dual[2] | — |
| Process type | — | Vapor-phase, selective, isotropic etch on sacrificial oxide[3] |
| Process chemistry | — | Anhydrous HF and ethanol (C2H5OH) with nitrogen (N2) gas mixture[3] |
| Operating pressure | — | 125 Torr fixed for the standard processes[3] |
| Standard recipes | — | Recipe1, Recipe2, Recipe3, Recipe4, Recipe5[3] |
| Minimum etch rate - Recipe1 | — | 12 nm/min[3] |
| Minimum etch rate - Recipe2 | — | 38 nm/min[3] |
| Minimum etch rate - Recipe3 | — | 125 nm/min[3] |
| Minimum etch rate - Recipe4 | — | 153 nm/min[3] |
| Minimum etch rate - Recipe5 | — | 175 nm/min[3] |
| Chemistry | — | Anhydrous HF and ethanol (C2H5OH) vapor with N2 carrier[3] |
| Total pressure | — | 125 Torr (fixed for standard processes)[3] |
| Recipe 1 etch rate (thermal oxide) | — | 12 nm/min minimum[3] |
| Recipe 2 etch rate (thermal oxide) | — | 38 nm/min minimum[3] |
| Recipe 3 etch rate (thermal oxide) | — | 125 nm/min minimum[3] |
| Recipe 4 etch rate (thermal oxide) | — | 153 nm/min minimum[3] |
| Recipe 5 etch rate (thermal oxide) | — | 175 nm/min minimum[3] |
| Maximum wafer size for etch rate measurement | — | 4-inch substrate (blanket thermal SiO2)[3] |
| Chamber pressure range (manual needle valve) | — | 75–150 Torr[3] |
| Gases used | — | Anhydrous HF, ethanol (C2H5OH) vapor, nitrogen (N2)[3] |
| Total process pressure | — | 125 Torr[3] |
| Minimum etch rate (Recipe1, thermal oxide) | — | 12 nm/min[3] |
| Minimum etch rate (Recipe2, thermal oxide) | — | 38 nm/min[3] |
| Minimum etch rate (Recipe3, thermal oxide) | — | 125 nm/min[3] |
| Minimum etch rate (Recipe4, thermal oxide) | — | 153 nm/min[3] |
| Minimum etch rate (Recipe5, thermal oxide) | — | 175 nm/min[3] |
| Process pressure | — | 125 Torr (fixed for all standard processes)[3] |
| Process Recipe1 minimum etch rate (thermal oxide) | — | 12 nm/min[3] |
| Process Recipe2 minimum etch rate (thermal oxide) | — | 38 nm/min[3] |
| Process Recipe3 minimum etch rate (thermal oxide) | — | 125 nm/min[3] |
| Process Recipe4 minimum etch rate (thermal oxide) | — | 153 nm/min[3] |
| Process Recipe5 minimum etch rate (thermal oxide) | — | 175 nm/min[3] |
| Process gases | — | Anhydrous HF, ethanol vapor, N2[3] |
| Etch chemistry | — | Vapor-phase HF with ethanol catalyst, selective to SiO2 over Si and other materials[3] |
| Primary use | — | Sacrificial oxide release[3] |
| Target material | — | Sacrificial SiO2[3] |
| Recipe1 minimum etch rate | — | 12 nm/min[3] |
| Recipe2 minimum etch rate | — | 38 nm/min[3] |
| Recipe3 minimum etch rate | — | 125 nm/min[3] |
| Recipe4 minimum etch rate | — | 153 nm/min[3] |
| Recipe5 minimum etch rate | — | 175 nm/min[3] |
| Recommended minimum etch duration | — | 15 min[3] |
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