Comparison ledger
Applied Materials 0010-13622 RF Match for, Mattson Aspen, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-13622 RF Match forApplied Materials | AspenMattson |
|---|---|---|
| OEM | Applied Materials | Mattson |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | 1990– |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-13622 RF Match for | Mattson Aspen |
| Cited variants | — | |
| Specifications | ||
| Configuration | High Efficiency HE RF Match-Bias[4] | — |
| Model | 0010-13622[4] | — |
| Product Type | RF Match for PVD (Physical Vapor Deposition)[4] | — |
| Feature | High Efficiency HE RF Match-Bias[4] | — |
| Wafer size | — | 100 mm, 150 mm, 200 mm (Aspen II); 200 mm, 300 mm (Aspen III)[1] |
| Process type | — | Strip, etch, CVD (PECVD)[3] |
| Process chamber configuration | — | Dual wafer chamber design; single or dual process chambers (Aspen II); one, two, or three process chambers (Aspen III)[2] |
| Throughput (Aspen II strip) | — | 90-130 wafers per hour with one chamber; 110-160 wafers per hour with two chambers[2] |
| Throughput (Aspen III strip) | — | ≥200 wafers per hour with three chambers[2] |
| Throughput (Aspen III CVD) | — | Up to 180 wafers per hour, depending on film type[3] |
| Temperature range (Aspen II ICP) | — | 100°C to 250°C[1] |
| Temperature range (eHighlands chamber) | — | Low temperature (10°C to 80°C)[1] |
| Pressure range (eHighlands chamber) | — | Low pressure (5 mT to 300 mT)[1] |
| Warped wafer handling | — | Supports warped (> 5 mm) wafers[1] |
| Installed base | — | More than 500 Aspen III systems installed worldwide; more than 1,000 Aspen II systems installed[1] |
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