Comparison ledger
Plasma-Therm 770, Tegal 6520, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 770Plasma-Therm | 6520Tegal |
|---|---|---|
| OEM | Plasma-Therm | Tegal |
| Category | Etch | Etch |
| Wafer size | 100mm | 100mm |
| Process node | — | — |
| Introduced | — | 2001 |
| Production run | — | 2001– |
| Lifecycle | — | — |
| Lifecycle milestones | — | 2001 Order announcement |
| Control system | — | — |
| Generation | — | — |
| Family | Plasma-Therm 770 | Tegal 6520 |
| Specifications | ||
| Manufacturer | Plasmatherm (Unaxis)[1] | — |
| Model | Plasma-Therm 770 SLR series[1] | — |
| Tool type | Dry Etch[1] | high-density CCP plasma etch tool[4] |
| System type | Fluorine-based ICP etcher with loadlock[1] | — |
| Plasma source | Inductively Coupled Plasma (ICP) coil[1] | — |
| Substrate bias | Capacitively coupled substrate RF supply[1] | — |
| ICP coil power | 1000 W at 2 MHz[1] | — |
| Substrate bias power | 500 W at 13.56 MHz[1] | — |
| Available gases | C4F8, SF6, O2, Ar, N2, CHF3, CF4[1] | — |
| Backside cooling | Helium backside cooling[1] | — |
| Chuck temperature | 10°C standard[1] | — |
| Wafer handling | Single 100 mm / 4-inch wafer handling with physical topside clamp contacting the outer 5 mm of the wafer[1] | — |
| Control system | Windows-based computer control of process and wafer handling[1] | — |
| Endpoint monitoring | In-situ laser monitor with camera and simulation software[1] | — |
| Number of MFC gas controllers | 8[2] | — |
| Gases (chlorine configuration) | N₂, O₂, CHF₃, AR, CH₄, CL₂, BCL₃, CF₄[2] | — |
| Wafer size range (with appropriate kit) | 2" to 8"[2] | — |
| Gases (previous usage, chlorine configuration) | N₂, O₂, He, CHF₃, Cl₂, BCl₃[3] | — |
| RF power | — | dual-frequency RF power application[4] |
| Plasma confinement | — | magnetic plasma confinement[4] |
| Wafer size | — | 100mm – 200mm[4] |
| Process capability | — | Rinse-Strip-Rinse (RSR)[5] |
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