Comparison ledger
Nikon R10, Raith EBPG5000, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | R10Nikon | EBPG5000Raith |
|---|---|---|
| OEM | Nikon | Raith |
| Category | Lithography | Lithography |
| Wafer size | 150mm | 150mm |
| Process node | — | sub-10 nm |
| Introduced | 1986 | — |
| Production run | 1973–1979 | — |
| Lifecycle | Discontinued | — |
| Lifecycle milestones | 1979 Movie camera business discontinued | — |
| Control system | — | — |
| Generation | i-line | — |
| Family | Nikon R10 | Raith EBPG5000 |
| Cited variants |
| |
| Specifications | ||
| wafer size | 150 mm[4] | — |
| exposure wavelength | i-line (365 nm)[4] | — |
| introduced | 1986[4] | — |
| technology generation | i-line[4] | — |
| Type | Silent super 8 cartridge movie camera[5] | — |
| Lens | Cine Nikkor Zoom, f: 1.4, F: 7-70 mm, zooming ratio 10x[5] | — |
| Lens optical construction | 10-group 14-element zoom lens[1] | — |
| Focusing | Manual, split image; macro focusing yes[5] | — |
| Zooming | Auto with 2 speeds and manual[5] | — |
| Filter size | 67 mm[5] | — |
| Viewfinder | Single-lens reflex with adjustable eyepiece; viewfinder information includes aperture scale[5] | — |
| Exposure control | Auto and manual; TTL Electric Eye; EE lock yes; exposure compensation +/-2 stops[5] | — |
| Film speed | Auto between 10/16 and 400/650 ASA (daylight/tungsten)[5] | — |
| Filter | Built-in 85A filter, coupled with movie light socket[5] | — |
| Filming speeds | 18, 24, 54 fps, single frame[5] | — |
| Shutter opening angle | Variable shutter; positions 0°, 40°, 80° and 160°[5] | — |
| Fading | Auto and manual fade-in/fade-out[5] | — |
| Rewinding / reverse filming | 100 frames approx, double exposure and lap dissolve; reverse filming 100 frames approx[5] | — |
| Sound | Double system, sound recording with synchronized tape recorder[5] | — |
| Connectors | Remote control socket yes; movie light socket Kodak type with filter control; flash synchronization socket yes[5] | — |
| Power source | 6 x AA batteries only; film drive motor DC micromotor[5] | — |
| Weight | 1930 g[5] | — |
| Dimensions | 68 x 260 x 200 mm[5] | — |
| Tripod socket | 1/4"[5] | — |
| Maker | Made in Japan by Nippon Kogaku[5] | — |
| Tool type | — | Ebeam lithography tool/system[2] |
| Feature capability | — | smaller than 10 nm features[2] |
| Placement accuracy | — | less than 20 nm[2] |
| Electron gun | — | 100 keV thermal field emission gun[2] |
| Beam type | — | Gaussian beam[2] |
| Pattern generator | — | 50 MHz[2] |
| Alignment | — | direct write mark detection and alignment software[2] |
| Wafer holders | — | 50 mm, 100 mm, and 150 mm wafers[2] |
| Mask holders | — | 5 inch masks and smaller piece parts[2] |
| Writing capability | — | 155 mm[3] |
| Maximum wafer size | — | up to 6 inches[3] |
| Maximum mask size | — | up to 6 inches[3] |
| Minimum feature size | — | less than 8 nm[3] |
| Field size | — | variable field size to 1 mm at all kVs[3] |
| Acceleration voltage | — | 100 keV[2] |
| Gun type | — | thermal field emission[2] |
| Pattern generator frequency | — | 50 MHz[2] |
| Overlay accuracy | — | <20 nm[2] |
| Wafer sizes supported | — | 50 mm, 100 mm, 150 mm[2] |
| Mask size supported | — | 5 inch[2] |
| Temperature control | — | 21°C ± 0.1°C[2] |
| Electron source type | — | Thermal Field Emission gun (TFE)[2] |
| Beam energy (EPFL EBPG5000ES) | — | 100 keV[2] |
| Pattern generator frequency (EPFL EBPG5000ES) | — | 50 MHz[2] |
| Minimum feature size (EPFL EBPG5000ES) | — | smaller than 10 nm[2] |
| Substrate support (EPFL EBPG5000ES) | — | holders for 50 mm, 100 mm, 150 mm wafers, 5‑inch masks and smaller piece parts[2] |
| Operating temperatures | — | 21 °C ± 0.1 °C (cleanroom environment)[2] |
| Model identifier (UChicago) | — | Raith EBPG5200 E-Beam lithography system (also called EBPG5000 Plus)[3] |
| Wafer size (UChicago model) | — | up to 6″ wafers[3] |
| Mask size (UChicago model) | — | up to 6″ masks[3] |
| Minimum feature size (UChicago model) | — | less than 8 nm[3] |
| Operating voltages (UChicago model) | — | 20, 50, and 100 kV[3] |
| Pattern generator frequency (UChicago model) | — | 50 / 100 MHz[3] |
| Minimum feature (EPFL EBPG5000ES) | — | smaller than 10 nm[2] |
| Electron source (EPFL EBPG5000ES) | — | 100 keV thermal field emission gun[2] |
| Pattern generator (EPFL EBPG5000ES) | — | 50 MHz[2] |
| Substrate holders (EPFL EBPG5000ES) | — | 50 mm, 100 mm, 150 mm wafers; 5-inch masks; smaller piece parts[2] |
| Cleanroom environment | — | custom cleanroom maintained at 21°C ± 0.1°C[2] |
| Minimum feature (PNF EBPG5200) | — | less than 8 nm[3] |
| Writing capability (PNF EBPG5200) | — | 155 mm[3] |
| Substrate sizes (PNF EBPG5200) | — | wafers up to 6 in; masks up to 6 in[3] |
| Acceleration voltages (PNF EBPG5200) | — | 20, 50, and 100 kV[3] |
| Pattern generator (PNF EBPG5200) | — | 50 / 100 MHz[3] |
| Field size (PNF EBPG5200) | — | variable field size to 1 mm at all kVs[3] |
| Electron source (PNF EBPG5200) | — | Thermal Field Emission gun[3] |
| Feature size | — | smaller than 10 nm features[2] |
| Gun | — | 100 keV thermal field emission gun[2] |
| Beam | — | Gaussian beam[2] |
| Holders | — | holders for 50 mm, 100 mm, and 150 mm wafers; 5 inch masks and smaller piece parts[2] |
| Wafer size | — | up to 6 inch wafers[3] |
| Mask size | — | up to 6 inch masks[3] |
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