Waferpedia

Comparison ledger

EV-420versus1505 G 6 E

EV Group EV-420, Nikon 1505 G 6 E, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
EV-420EV Group
OEMEV GroupNikon
CategoryLithographyLithography
Wafer size——
Process node——
Introduced——
Production run—1988–
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyEV Group EV-420Nikon 1505
Specifications
Equipment typefront & backside mask aligner[1]—
TypeFront & backside mask aligner[2]—
Exposure sourceUV[3]—
Exposure dose (as stated)625 mJ/cm²[3]—
UV source intensity625 mJ/cm² (measured during exposure)[3]—
Configuration—5" reticle[4]
Resolution—650 nm[5]
Numerical Aperture—0.54[5]
Reduction—5x[5]
Exposure Field—15 x 15 mm[5]
Alignment Accuracy—130 nm[5]
Wafer Size—4 inch[4]
Light Source—g-line[6]
Introduction Year—1988[5]
NA (Numerical Aperture)—0.54[5]
Make—Nikon[4]
Model—1505 G 6 E[4]
Category—Stepper[4]
Wafer Sizes—4 inch[4]
Exposure type—g-line[5]
NA—0.54[5]
Exposure field—9.3 x 18.8 mm[5]

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Sources (6)Every fact above is drawn from these public sources
  1. [1]nanofab.utah.edunanofab.utah.edu
  2. [2]nanofab.utah.edunanofab.utah.edu
  3. [3]repository.tudelft.nlrepository.tudelft.nl
  4. [4]inventory listing
  5. [5]web.archive.orgweb.archive.org
  6. [6]ece.utoronto.caece.utoronto.ca