Comparison ledger
Esec 2100 hS i, Esec Datacon 2200 evo hF, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 2100 hS iEsec | |
|---|---|---|
| OEM | Esec | Esec |
| Category | Packaging & Bonding | Packaging & Bonding |
| Wafer size | 4" | 4" |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | 3rd generation | 3rd generation |
| Family | Esec 2100 hS i | Esec Datacon 2200 evo hF |
| Cited variants | ||
| Specifications | ||
| Type | Die bonder[1] | — |
| Generation | 3rd generation[1] | — |
| Platform | 300 mm high speed platform[1] | — |
| Bonding method | Epoxy[1] | Epoxy[1] |
| Cycle time | 120 ms with Liquid Cooling option[1] | 120 ms with Liquid Cooling option[1] |
| Bonding accuracy | 20 µm @ 3σ (15 µm option)[1] | 20 µm @ 3σ (15 µm option)[1] |
| Wafer size | 4" to 12" (on 8" or 12" wafer frames)[1] | 4" to 12" (on 8" or 12" wafer frames)[1] |
| Die size | 0.25 mm (with Small Die Kit) to 20 mm[1] | 0.25 mm (with Small Die Kit) to 20 mm[1] |
| Leadframe size | Length: 90 to 300 mm; Width: 23 to 100 mm[1] | Length: 90 to 300 mm; Width: 23 to 100 mm[1] |
| Machine dimensions | 1785 x 1448 x 1400 mm (W x D x H)[1] | 1785 x 1448 x 1400 mm (W x D x H)[1] |
| Machine type | — | Die Bonder[1] |
| Platform generation | — | 3rd generation[1] |
| Platform description | — | most flexible 300 mm high speed platform[1] |
| Product type | — | Automatic die bonder[2] |
| Bond force | — | 0.5 to 500 N[3] |
| X/Y placement accuracy | — | ±10 µm @ 3s[3] |
| Theta placement accuracy | — | ±0.15° @ 3s[3] |
| Wafer handling | — | SEMI-conform 12" wafer handling[3] |
| Substrate working range | — | 12" x 7" (300 mm x 175 mm)[3] |
| Die thickness | — | 0.17 mm to 7 mm[3] |
| Overall dimensions | — | 1160 x 1225 x 1800 mm[2] |
| Footprint LxDxH | — | 1160 mm x 1225 mm x 1800 mm[3] |
| Chip trays | — | Waffle pack/Gel-Pak 2" x 2" and 4" x 4", JEDEC tray on request[3] |
| Heated bond head | — | 450 °C[3] |
| Standard bond head rotation | — | 0° to 360°[3] |
| Substrate heating | — | 350 °C (optional)[3] |
| Uptime | — | > 98%[3] |
| Yield | — | > 99.95%[3] |
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