Waferpedia

Comparison ledger

2009 fS EversusDatacon 2200 evo advanced

Esec 2009 fS E, Esec Datacon 2200 evo advanced, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
OEMEsecEsec
CategoryPackaging & BondingPackaging & Bonding
Wafer size4"4"
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation3rd generation3rd generation
FamilyEsec 2009 fS EEsec Datacon 2200 evo advanced
Cited variants—
  • Datacon 2200 evo[1]
  • Datacon 2200 evo plus[1]
  • Datacon 2200 evo hF[1]
  • Datacon 2200 evo hS[1]
  • Datacon 2200 evo advanced[1]
Specifications
Machine typeDie bonder[1]—
Platform description3rd generation of the most flexible 300 mm high speed platform[1]—
Bonding methodEpoxy[1]Epoxy[1]
Cycle time120 ms with Liquid Cooling option[1]120 ms with Liquid Cooling option[1]
Bonding accuracy20 µm @ 3σ (15 µm option)[1]20 µm @ 3σ (15 µm option)[1]
Wafer size4" to 12" (on 8" or 12" wafer frames)[1]4" to 12" (on 8" or 12" wafer frames)[1]
Die size0.25 mm (with Small Die Kit) to 20 mm[1]0.25 mm (with Small Die Kit) to 20 mm[1]
Leadframe sizeLength: 90 to 300 mm; Width: 23 to 100 mm[1]Length: 90 to 300 mm; Width: 23 to 100 mm[1]
Machine dimensions1785 x 1448 x 1400 mm (W x D x H)[1]1785 x 1448 x 1400 mm (W x D x H)[1]

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Sources (1)Every fact above is drawn from these public sources
  1. [1]besi.combesi.com