Comparison ledger
Axcelis 200 ACU, Lam Research 2300 Versys Kiyo, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 200 ACUAxcelis | 2300 Versys KiyoLam Research |
|---|---|---|
| OEM | Axcelis | Lam Research |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Axcelis NV GSD 200 | Lam Research 2300 Versys Kiyo |
| Cited variants | — | |
| Specifications | ||
| Configuration | Parts Machine[3] | — |
| Manufacturer | Axcelis[3] | — |
| Model | 200 ACU[3] | — |
| Tool type | Asher[3] | — |
| Wafer size | 200mm[5] | — |
| Serial number | AU6A356AH[5] | — |
| Computer system | M 200 PC, M 200[6] | — |
| Part number | SC 4572 A[6] | — |
| Volts | 208[6] | — |
| Amps | 30[6] | — |
| Equipment type | Asher[3] | — |
| Wafer configuration | 8 inch[4] | — |
| Wafer Size | — | 300mm (12 inch)[1] |
| Configuration (Kiyo 2300 V2) | — | 4 Kiyo CX chambers, 3 load ports, ATM robot with one end effector, VTM robot with dual end effectors, software version SP15-HF6, communication protocols RS232 and LON[1] |
| Application | — | Polysilicon Etch[1] |
| Plasma Source | — | Dual-frequency CCP[8] |
| Power System | — | 3kW RF generator with independent bias and source tuning[8] |
| Gas Configuration | — | Up to 10 gas lines, including reactive gases (CF₄, Cl₂, HBr) and radicals (O₂, N₂)[8] |
| Throughput | — | 60–100 wafers/hour (node-dependent)[8] |
| Wafer Cooling | — | ESC with ±1°C stability[8] |
| Aspect Ratio Capability | — | >30:1[8] |
| Chamber Design | — | Dual-chamber configuration with isolated process and exhaust zones[8] |
| Plasma Source Frequencies | — | 13.56 MHz + 2 MHz[8] |
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