Comparison ledger
Applied Materials 0041-26723 Bonded Assembly, EV Group 850, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0041-26723 Bonded AssemblyApplied Materials | 850EV Group |
|---|---|---|
| OEM | Applied Materials | EV Group |
| Category | Packaging & Bonding | Packaging & Bonding |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0041-26723 Bonded Assembly | EV Group 850 |
| Cited variants | — | |
| Specifications | ||
| Wafer sizes | — | 2, 3, 4, 5, 6, 8, 12 inch[3] |
| Vintage | — | 2005 Vintage[3] |
| Wafer diameter (LT) | — | 100 - 200, 150 - 300 mm[1] |
| Operation (LT) | — | Fully-automated cassette-to-cassette operation[1] |
| Alignment type (LT) | — | Flat-to-flat or notch-to-notch[1] |
| Alignment accuracy (LT) | — | X and Y: ± 50 µm, Theta: ± 0.1 °[1] |
| Bond force (LT) | — | Up to 5 N[1] |
| Vacuum system (LT) | — | 9x10-2 mbar standard; 9x10-3 mbar option with turbo pump[1] |
| Standard process gases (LT) | — | N2 and O2[1] |
| Additional process gases (LT) | — | High purity gases (99.999%), noble gases (Ar, He, Ne, etc.), forming gases (N2, Ar with up to 4 % H2)[1] |
| Cleaning methods (LT) | — | Rinse standard; megasonic nozzle, megasonic area transducer, jet nozzle, brush optional[1] |
| Cleaning media (LT) | — | DI-water standard; NH4OH and H2O2 with max. 2 % concentration option[1] |
| Spinner chuck rotation (LT) | — | Up to 3000 rpm in 5 s[1] |
| Wafer diameter (TB) | — | Up to 300 mm, oversized carrier possible[2] |
| Operation (TB) | — | Fully automated temporary wafer bonding of a substrate on a rigid carrier[2] |
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