Tegal
Provisional entry — research in progress
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An RF plasma etcher creates a glow discharge by applying radio-frequency power to a process gas at low pressure. The resulting plasma contains ions, electrons, and radicals that react with the wafer surface to etch patterns defined by a mask.
In an inline automatic system, wafers are loaded from a cassette, processed in sequence through a series of chambers or stations, and then unloaded automatically, allowing high-throughput operation.
Plasma etching is a pattern-transfer step that follows photolithography in semiconductor fabrication. The etcher removes material from areas not protected by photoresist or a hard mask, transferring the circuit pattern into the underlying layer.
Plasma etchers are used to etch silicon, silicon dioxide, silicon nitride, and various metals (e.g., aluminum, tungsten) in the manufacture of integrated circuits and microelectromechanical systems.
The Tegal 803, as an RF plasma etcher, would be applicable to both front-end-of-line (FEOL) and back-end-of-line (BEOL) etching processes, including polysilicon gate etching, contact hole formation, and metal interconnect patterning.
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
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The following facts about the 803 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 803 are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the 803 are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the 803 are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the 803 are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the 803 is not on record.
Answerable by: an OEM datasheet or a fab qualification report
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Last updated Oct 3, 2026.
The Applied Materials 0010-47763 is an electrostatic chuck (ESC) assembly used in semiconductor etching processes.
The Applied Materials 0010-16392 is an electrostatic chuck assembly designed for 300 mm wafer processing, featuring a dual electrode configuration.
Oxford Instruments 100 ICP Fluorine is an inductively coupled plasma etcher for fluorine-based etching, supporting cryo DRIE and multiple etch gases including SF6 and C4F8.