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STS

320

STS 320 family
Research Quality: 30% complete

The STS 320 is a parallel-plate reactive ion etching (RIE) tool manufactured by Surface Technology Systems. The STS 320 is designed for etching silicon, silicon nitride, and transition metals using fluorine-based chemistries. The STS 320 uses an RF frequency of 13.56 MHz and has a driven electrode area of about 900 cm².[1]

STS320
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Power

13.56 MHz[1]

Vacuum

55 mtorr[1]

Gas delivery

SF6, SF6+O2, CF4, CF4+O2[1]

What is it?

The STS 320 is a parallel-plate RIE tool manufactured by Surface Technology Systems. It operates at an RF frequency of 13.56 MHz and has a driven electrode area of about 900 cm². The tool is used with fluorine-based chemistries such as SF6, SF6+O2, CF4, and CF4+O2.

What can it run?

Process applications and technology nodes documented for this tool.

  • Etching of silicon
  • Etching of silicon nitride
  • Etching of transition metals with volatile fluorides

Why won't it start?

Documented failure modes, common issues, and field considerations.

  • CF4 recipes may cause fluorocarbon polymer buildup on chamber walls and reduced etch rate over time (source: recipe description for STS 320 CF4).
  • Fluorocarbon residue from CF4-based recipes can affect later formation of electrical contacts (source: recipe description for STS 320 CF4).

What do the numbers mean?

Power & electrical1

RF Frequency
13.56 MHz[1]
Accurate?

Vacuum & pumping1

Pressure (typical)
55 mtorr[1]
Accurate?

Gas & chemistry1

Process Gases
SF6, SF6+O2, CF4, CF4+O2[1]
Accurate?

Configuration & options5

Reactive Ion Etch Type
Parallel-plate RIE[1]
Accurate?
Driven Electrode Area
900 cm²[1]
Accurate?
OEM
Surface Technology Systems[1]
Accurate?
Tool type
parallel-plate RIE tool[1]
Accurate?
Driven electrode area
about 900 cm2[1]
Accurate?

Vintage & configurations

Documented models & variants

DesignationGenerationVintageChangesSource
STS 320 SF4——Uses SF4 at 13.56 MHz, 100 mtorr, and is described as targeting silicon, silicon nitride, and transition metals with volatile fluorides.nanocenter.umd.edu[1]
STS SF4 O2——Uses SF4 and O2 at 13.56 MHz, 100 mtorr, and is described as increasing target-material etch rate while also increasing photoresist etch rate.nanocenter.umd.edu[1]
STS 320 CF4——Uses CF4 at 13.56 MHz, 100 mtorr, and is described as targeting silicon dioxide.nanocenter.umd.edu[1]
STS CF4 O2——Uses CF4 and O2 at 13.56 MHz, 100 mtorr, and is described as etching silicon nitride and silicon faster than oxide while reducing fluorocarbon buildup.nanocenter.umd.edu[1]
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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • RF Frequency13.56 MHz[1]
  • Process GasesSF6, SF6+O2, CF4, CF4+O2[1]
  • Pressure (typical)55 mtorr[1]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Not publicly documented

The following facts about the 320 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 320 are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • The control-system platform and OS era of the 320 are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • The process node or technology generation of the 320 is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

  • No publicly documented compatible parts, consumables, or accessories for the 320 are on record.

    Answerable by: an OEM parts catalog or a service engineer

  • No publicly hosted manuals, SOPs, or datasheets for the 320 are on record.

    Answerable by: university cleanroom staff or an OEM application specialist

Sources & citations

Sources (1)Every fact above is drawn from these public sources
  1. [1]nanocenter.umd.edu — nanocenter.umd.edunanocenter.umd.edu
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Last updated Oct 11, 2026.

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