Oxford Instruments
Provisional entry — research in progress
This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.
The Oxford FlexAL is an atomic layer deposition (ALD) system that supports both thermal and plasma-assisted reaction mechanisms. The FlexAL is capable of depositing highly uniform, thin and conformal dielectric films at low temperatures.[1][2]

The Oxford Instruments FlexAL is an atomic layer deposition (ALD) system. The FlexAL supports both plasma-assisted and thermal reaction mechanisms for deposition. The FlexAL ALD tool is capable of depositing highly uniform, thin, and conformal dielectric films at low temperatures. The system is part of a cluster tool arrangement at some installations, sharing a common loadlock with a PlasmaLab 100 PECVD system. The FlexAL is used for depositing materials such as Al₂O₃, TiO₂, HfO₂, SiO₂, and various nitrides including TiN, TaN, and SiN.[2][3][4][5]
The FlexAL operates on the principle of atomic layer deposition, using sequential, self-limiting surface reactions to grow thin films. The system can employ either a remote plasma source or thermal energy to drive the chemical reactions. In plasma-assisted ALD, a remote plasma generates reactive species that enable deposition at lower substrate temperatures. The chamber can be heated up to 150 °C, and the substrate holder can be heated up to 550 °C. The system is configured to handle wafers up to 200 mm in diameter.[4][2]
| Designation | Generation | Vintage | Changes | Source |
|---|---|---|---|---|
| System 100 PECVD / FlexAL ALD (thermal/plasma) cluster system | — | — | Cluster configuration with FlexAL ALD and PlasmaLab 100 PECVD sharing a common loadlock | uwaterloo.ca[2] |
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
Publicly hosted documents referencing this tool, linked at their original location. Hosted by the linked institutions — availability may change.
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
No research found yet — worked with this tool? Share what you know.
The chamber can be heated to up to 150 °C. The substrate holder can be heated to up to 550 °C.[4]
Commissioned film types via ALD include Al₂O₃ (plasma and thermal processes using TMA precursor), TiO₂ (plasma process using TIIP precursor), HfO₂ (plasma process using TEMAH precursor), and SiO₂ (plasma process using BTBAS precursor). Additional materials compatible with the system include TiN, TaN, and SiN.[2][3]
The following facts about the FlexAL are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the FlexAL are on record.
Answerable by: OEM historical records or a trade-press announcement
The control-system platform and OS era of the FlexAL are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the FlexAL are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the FlexAL is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the FlexAL are on record.
Answerable by: an OEM parts catalog or a service engineer
No research found yet — worked with this tool? Share what you know.
Last updated Sep 23, 2026.
The Applied Materials 0010-13622 is an RF match unit intended for PVD (Physical Vapor Deposition) described as a High Efficiency HE RF Match-Bias.
The Applied Materials 0020 12458 Part is an insulator, side match component for the Hdp-Cvd Ultima Plus system.