EV Group
850 Direct Bonding
Provisional entry — research in progress
This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.
The EVG 850 is a direct bonding system for 6-inch wafers.[1]
What it is
The EVG 850 is an automated production bonding system designed for fusion and molecular wafer bonding, primarily for silicon-on-insulator (SOI) wafer fabrication. The system combines all essential steps for SOI bonding—cleaning, pre-bonding, and IR inspection—into a single platform. The EVG 850 is built to operate in high-throughput, high-yield production environments and has been established as an industry standard for SOI wafer manufacturing.[2]
How it works
The EVG 850 performs the pre-bond sequence inside a pre-bonding chamber. The system uses mechanical flat-to-flat or notch-to-notch alignment with an accuracy of ±50 µm in X and Y and ±0.1° in Theta. Bond force is applied up to 5 N, and the bond wave initiation position can be flexibly set from the wafer edge to the center. The vacuum system achieves 9×10⁻² mbar standard and 9×10⁻³ mbar with an optional turbo pump.[2]
An integrated cleaning station prepares the wafer surfaces prior to bonding. The cleaning chamber is made of PP or PFA and supports rinse, megasonic nozzle, megasonic area transducer, jet nozzle, and optional brush cleaning. Cleaning media include DI-water standard and optionally NH₄OH and H₂O₂ at up to 2% concentration. The spinner chuck rotates wafers up to 3000 rpm in 5 seconds, and the cleaning arm accommodates up to five media lines. The EVG 850 also offers an optional LowTemp™ plasma activation module and an IR-inspection station.[2]
Where it fits in the process flow
The EVG 850 is positioned in the wafer bonding process flow after wafer preparation (cleaning and surface activation) and before the final annealing step. By integrating cleaning, alignment, pre-bonding, and inline IR inspection, the system reduces wafer handling and contamination risk, enabling a high-yield production process for void-free bonds.[2]
Applications
The primary application of the EVG 850 is the production of silicon-on-insulator (SOI) wafers, which serve as a base material for faster and higher-performance microelectronic devices. The system is also used for direct wafer bonding in wafer-level 3D integration, enabling the stacking of multiple device layers.[2]
What do the numbers mean?
Wafer handling1
Where are the manuals?
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Not publicly documented
Field notes
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Not publicly documented
The following facts about the 850 Direct Bonding are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
Fewer than 3 independently cited specifications for the 850 Direct Bonding are on record; the remainder await public documentation.
Answerable by: an OEM datasheet, a cleanroom equipment inventory, or an engineer who operated or installed it
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 850 Direct Bonding are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the 850 Direct Bonding are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the 850 Direct Bonding are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the 850 Direct Bonding are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (2)Every fact above is drawn from these public sources
- [1]Equipment inventory listing
- [2]EVG®850 Automated Production Bonding System for SOI — evgroup.comevgroup.com
Last updated Sep 24, 2026.
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