Comparison ledger
Oxford Instruments Plasmalab80, Tegal 1512e, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Plasmalab80Oxford Instruments | 1512eTegal |
|---|---|---|
| OEM | Oxford Instruments | Tegal |
| Category | Etch | Etch |
| Wafer size | up to 8-inch diameter wafers | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments Plasmalab80 | Tegal 1512e |
| Specifications | ||
| Etch and deposition capabilities | Combined etch and deposition tool[1] | — |
| Etch processes | Bosch (gas chopping) or cryo processes[1] | — |
| Deposition materials | Silicon dioxide, silicon nitride, or mixed oxynitrides[1] | — |
| Wafer diameter | Up to 8-inch wafers[1] | — |
| Active etch/deposition region | Center 4 inches of the chamber[1] | — |
| Available gases | N2, N2O, O2, SF6, Ar (max flow 100 sccm); C4F8, SiH4, CH4 (max flow 20 sccm)[1] | — |
| Power | 300 W RF and 300 W ICP[1] | — |
| Process pressure | 4 to 100 mTorr[1] | — |
| Substrate temperature | -150 to 200 C[1] | — |
| Tool type | — | Industrial RIE plasma etcher system[2] |
| Stated configuration | — | With modules assembly for CI-4222[2] |
Plan your fab
Building a Etch process? Get a complete equipment list.
Open the fab equipment planner →