Comparison ledger
Oxford Instruments Plasmalab 80 Plus, Plasma-Therm 720/740, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Plasmalab 80 PlusOxford Instruments | 720/740Plasma-Therm |
|---|---|---|
| OEM | Oxford Instruments | Plasma-Therm |
| Category | Etch | Etch |
| Wafer size | 200mm | 200mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments Plasmalab 80 | Plasma-Therm 720/740 |
| Cited variants | — | |
| Specifications | ||
| Tool ID | DE-04[1] | — |
| Type | Reactive Ion Etching (RIE)[1] | — |
| Design | compact open-loading tool[1] | — |
| RF generator | 600W[1] | — |
| Wafer capacity | up to 200mm wafers[1] | — |
| Process gases | CF4, Ar, O2, SF6, CHF3[1] | — |
| Suitability | R&D or small-scale production[1] | — |
| RF power | 600W[1] | — |
| Maximum wafer size | 200mm[1] | — |
| Tool type | Reactive Ion Etching (RIE)[1] | — |
| Wafer size | Up to 200mm[1] | — |
| Loading type | Open load[1] | — |
| -Process | PECVD | — |
| -Voltage | 208 VAC, 3 Phase | — |
| -Equipment component | Main body | — |
| Description | Open load reactive ion etch system[3] | — |
| Wafer size designed for | 100 mm[3] | — |
| Wafer size maximum | 200 mm[3] | — |
| Platen size | 238 mm[3] | — |
| Power range | < 270 W[3] | — |
| Etch targets | Compound semiconductors and metals[3] | — |
| system type | — | dual chamber RIE loadlocked system[2] |
| chemistry | — | chlorine and fluorine based chemistry[2] |
| left chamber designation | — | 740 (left chamber), designated Au exposure system[2] |
| right chamber designation | — | 720 (right chamber), designated for chlorine and fluorine based etching of 2D materials and perovskites[2] |
| wafer capacity | — | up to 200mm diameter wafers[2] |
| Chemistry | — | chlorine and fluorine based[2] |
| Max wafer diameter | — | 200mm[2] |
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