Comparison ledger
Oxford Instruments Plasmalab 133, Oxford Instruments Plasmalab 180 ICP, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Plasmalab 133Oxford Instruments | Plasmalab 180 ICPOxford Instruments |
|---|---|---|
| OEM | Oxford Instruments | Oxford Instruments |
| Category | Deposition | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments Plasmalab | Oxford Instruments Plasmalab |
| Specifications | ||
| Frequency | 50 Hz[1] | — |
| Voltage | 415 Vac 3[2] | — |
| Process type | PECVD (Plasma-Enhanced Chemical Vapor Deposition)[1] | ICP (Inductively Coupled Plasma) high-density etching system configured for reactive ion etching[6] |
| Category | Deposition[1] | — |
| Vintage | 2010[2] | — |
| Wafer size | 8"[3] | — |
| Maximum wafer size | 300 mm (330 mm chuck)[4] | — |
| RF power | 600 W, 13.56 MHz[4] | — |
| Electrode temperature control | 10 °C – 80 °C (water-cooled)[4] | — |
| Endpoint detection | Verity Optical Emission Spectroscopy (OES), 200–800 nm[4] | — |
| Gas delivery | 8-line manifold with 7 MFCs[4] | — |
| Power | 50 Hz[1] | — |
| Configuration | — | For parts[5] |
| System type | — | Load-locked plasma etching system with ICP source[6] |
| Operation | — | Fully automatic computer-controlled operation[6] |
| Maximum substrate size | — | 150 mm[6] |
| Configured substrate size | — | 100 mm wafers[6] |
| Wafer clamping | — | Mechanical clamping[6] |
| Backside cooling | — | Helium cooling[6] |
| Vacuum system | — | Alcatel turbo pump with controller and roughing pump[6] |
| Gas box | — | Six MFC gas controllers[6] |
| Previously used process gases | — | CHF3/CHF4, C3F8, C4F8, argon, oxygen, hydrogen, chlorine[6] |
| Electrical rating | — | 208V, 3-phase, 50/60 Hz[6] |
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