Comparison ledger
Oxford Instruments NGP80, Tegal 980, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | NGP80Oxford Instruments | 980Tegal |
|---|---|---|
| OEM | Oxford Instruments | Tegal |
| Category | Etch | Etch |
| Wafer size | 200mm | 200mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments NGP80 | Tegal 980 |
| Cited variants | ||
| Specifications | ||
| Equipment name | Oxford NGP80 RIE[3] | — |
| Model | NGP80[4] | — |
| Configuration options | RIE, PECVD, RIE/PECVD[4] | — |
| Wafer size | up to 200 mm[4] | 200mm[2] |
| Electrode diameter | 240 mm[1] | — |
| RF power | 300 W[5] | — |
| Substrate temperature range (standard) | 5-80 °C[5] | — |
| Substrate temperature (max) | 400 °C[4] | — |
| Cryogenic temperature option | down to -150 °C[1] | — |
| Base pressure | ≤5×10⁻⁷ mbar[4] | — |
| Process pressure range | 10 mTorr to 10 Torr[4] | — |
| Gas species (RIE variant) | O2, CF4, SF6, Ar, CHF3, N2[5] | — |
| Chuck material | graphite[5] | — |
| Process Type | Reactive Ion Etch (RIE)[5] | — |
| Wafer Handling | pieces (unmounted), 100 mm, 150 mm[5] | — |
| Chuck Temperature Range | 5–80 °C[5] | — |
| Gas Species | O2, CF4, SF6, Ar, CHF3, N2[5] | — |
| Location | room W1-062[6] | — |
| Series name | — | 980 ACS Series[2] |
| Process type | — | Plasma etch[2] |
| System type | — | Single wafer cassette-to-cassette etch system[2] |
| Throughput | — | Faster throughput[2] |
| Calibration | — | Faster system calibration[2] |
| User interface | — | Touchscreen graphical user interface[2] |
| Data handling | — | Integrated data logging[2] |
| Factory automation | — | Factory automation support[2] |
| Tool format | — | Single wafer cassette-to-cassette etch system[2] |
| System calibration | — | Faster system calibration[2] |
| Automation | — | Factory automation support[2] |
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