Comparison ledger
Oxford Instruments NGP80, Plasma-Therm 720/740, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | NGP80Oxford Instruments | 720/740Plasma-Therm |
|---|---|---|
| OEM | Oxford Instruments | Plasma-Therm |
| Category | Etch | Etch |
| Wafer size | 200mm | 200mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments NGP80 | Plasma-Therm 720/740 |
| Cited variants | ||
| Specifications | ||
| Equipment name | Oxford NGP80 RIE[3] | — |
| Model | NGP80[4] | — |
| Configuration options | RIE, PECVD, RIE/PECVD[4] | — |
| Wafer size | up to 200 mm[4] | — |
| Electrode diameter | 240 mm[1] | — |
| RF power | 300 W[5] | — |
| Substrate temperature range (standard) | 5-80 °C[5] | — |
| Substrate temperature (max) | 400 °C[4] | — |
| Cryogenic temperature option | down to -150 °C[1] | — |
| Base pressure | ≤5×10⁻⁷ mbar[4] | — |
| Process pressure range | 10 mTorr to 10 Torr[4] | — |
| Gas species (RIE variant) | O2, CF4, SF6, Ar, CHF3, N2[5] | — |
| Chuck material | graphite[5] | — |
| Process Type | Reactive Ion Etch (RIE)[5] | — |
| Wafer Handling | pieces (unmounted), 100 mm, 150 mm[5] | — |
| Chuck Temperature Range | 5–80 °C[5] | — |
| Gas Species | O2, CF4, SF6, Ar, CHF3, N2[5] | — |
| Location | room W1-062[6] | — |
| system type | — | dual chamber RIE loadlocked system[2] |
| chemistry | — | chlorine and fluorine based chemistry[2] |
| left chamber designation | — | 740 (left chamber), designated Au exposure system[2] |
| right chamber designation | — | 720 (right chamber), designated for chlorine and fluorine based etching of 2D materials and perovskites[2] |
| wafer capacity | — | up to 200mm diameter wafers[2] |
| Chemistry | — | chlorine and fluorine based[2] |
| Max wafer diameter | — | 200mm[2] |
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