Comparison ledger
Oxford Instruments 100 ICP Fluorine, Tokyo Electron TE 8401 Dry, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | TE 8401 DryTokyo Electron |
|---|---|---|
| OEM | Oxford Instruments | Tokyo Electron |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | Tokyo Electron TE 8401 |
| Cited variants | — | |
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[3] | — |
| Cryo DRIE etch rate | up to 5 µm/min[3] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[3] | — |
| Configuration | — | Single chamber[1] |
| Gas | — | He, O2, CF4, HBr, CL2[1] |
| OS | — | EPROM based system[1] |
| Missing | — | pumps[2] |
| Wafer Size | — | 8 inch (200 mm)[4] |
| Chamber Configuration (Poly Etch) | — | Single chamber[1] |
| Chamber Configuration (Nitride Etch) | — | Dual chamber[2] |
| Process Gases (Poly Etch) | — | He, O2, CF4, HBr, Cl2[1] |
| Process Gases (Nitride Etch) | — | HBr, Cl2[2] |
| Operating System (Poly Etch) | — | EPROM based system[1] |
| Operating System (Nitride Etch) | — | JDOS[2] |
| Chamber Configuration | — | Single chamber[1] |
| Process Type | — | Poly etch[1] |
| Gases | — | He, O2, CF4, HBr, Cl2[1] |
| Operating System | — | EPROM based system[1] |
| Vintage | — | 1996[5] |
| Type | — | Dry Etcher[4] |
| Process | — | Poly etch[1] |
| Chamber configuration | — | Dual chamber[2] |
| Operating system | — | EPROM based[1] |
| OEM | — | Tokyo Electron[4] |
| Model | — | TE 8401[4] |
| Category | — | Dry Etcher[4] |
| Control system | — | EPROM based system[1] |
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