Waferpedia

Comparison ledger

100 ICP FluorineversusPlasmalab 100 Plus ICP

Oxford Instruments 100 ICP Fluorine, Oxford Instruments Plasmalab 100 Plus ICP, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
100 ICP FluorineOxford Instruments
Plasmalab 100 Plus ICPOxford Instruments
OEMOxford InstrumentsOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyOxford Instruments 100 ICP FluorineOxford Instruments Plasmalab 100 Plus ICP
Specifications
Etch GasesSF6, CF4, O2, Ar, N2, CHF3, C4F8[1]—
Cryo DRIE etch rateup to 5 µm/min[1]—
Wafer size4 inch, 6 inch, 8 inch (with clamp change)[1]—
Tool type—ICP Etcher (Inductively Coupled Plasma)[2]
Make—Oxford[2]
Model—Plasmalab 100 Plus[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]nanofab.utah.edunanofab.utah.edu
  2. [2]Equipment inventory listing