Waferpedia

Comparison ledger

NSR S 208 Dversus150 e Mask

Nikon NSR S 208 D, SUSS MicroTec 150 e Mask, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
150 e MaskSUSS MicroTec
OEMNikonSUSS MicroTec
CategoryLithographyLithography
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyNikon NSR S 208SUSS MicroTec 150 e Mask
Specifications
ConfigurationSoftware ver. MCSW 180-P12/OCSW ver. 180-P10[1]—
CIMSECs[1]—
ProcesskRF[1]—
Handler Systemexternal FOUP system[1]—
Factory InterfaceSMIF[1]—
Wavelength248 nm[2]—
Lens NA0.82[2]—
Exposure Area26 x 33 mm[2]—
Reduction Ratio1/4[2]—
Resolution<110 nm[2]—
Throughput (300 mm)>147 wph[2]—
Throughput (200 mm)>165 wph[2]—
Wafer Size200/300 mm[2]—
Software VersionMCSW 180-P12 / OCSW ver. 180-P10[1]—
ComponentsAmp Rack, Temperature Controller, Cymer Laser, Air Conditioner[1]—
Throughput300 mm > 147 WPH; 200 mm > 165 WPH[2]—
Included modulesAmp Rack; Temperature Controller; Cymer Laser; Air Conditioner[1]—

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Sources (2)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]web.archive.orgweb.archive.org