Comparison ledger
Lapmaster 12 Benchtop Lapping Polishing, STEAG Mecapol E 460, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 12 Benchtop Lapping PolishingLapmaster | Mecapol E 460STEAG |
|---|---|---|
| OEM | Lapmaster | STEAG |
| Category | CMP | CMP |
| Wafer size | — | 4" |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lapmaster 12 Benchtop Lapping Polishing | STEAG Mecapol E 460 |
| Specifications | ||
| Make | Lapmaster[1] | — |
| Model | 12[1] | — |
| Category | CMP[2] | — |
| Type/Application | Single sided[3] | — |
| Plate diameter | 12 in[3] | — |
| No. of conditioning rings | 3[4] | — |
| Configuration | Ring lapper[4] | — |
| Base | Rigid, lightweight, cast aluminum base[4] | — |
| Standard RPM | 60 RPM[4] | — |
| RPM range with variable speed drive | 0-60[4] | — |
| Drive motor - lapper | 0.5 HP[4] | — |
| Drive motor - polisher | 0.75 HP[4] | — |
| Length | 25 in[4] | — |
| Width | 18 in[4] | — |
| Height | 24 in[4] | — |
| Estimated shipping weight | 240 lbs[4] | — |
| Approximate weight | 135 lbs / 61 kg[5] | — |
| Approximate dimensions | 24.5 in × 17.5 in × 23.8 in (622 mm × 445 mm × 607 mm)[5] | — |
| Electrical system | Various voltages; 50/60 Hz; 1 phase and 3 phase to customer specification[5] | — |
| Motor | 1/3 hp / 0.25 kW motor with gear reducer[5] | — |
| Abrasive feed system | Designed for water or oil based lapping slurries[5] | — |
| Automatic cycle timer | Automatic digital cycle timer[5] | — |
| Ring configuration | Ring lapper[4] | — |
| Ring ID | 4.25 inches[4] | — |
| System type | — | semi-automatic system for polishing and planarization of wafers[6] |
| Wafer compatibility | — | 4", 6", and 8" wafers[6] |
| Other sample handling | — | other wafer sizes or chips can be processed by bonding them to a carrier wafer[6] |
| Slurry delivery | — | 2 pumps[6] |
| Conditioning system | — | ex-situ conditioning system[6] |
| Wafer size compatibility | — | 4", 6", 8"[6] |
| Slurry pumps | — | 2 pumps[6] |
| Equipment type | — | Semi-automatic CMP (chemical mechanical polishing) tool[6] |
| Wafer size | — | 4", 6", 8"[6] |
| Carrier wafer processing | — | Other wafer sizes or chips can be processed by bonding them to a carrier wafer[6] |
| Available slurries | — | 30N50, 30H50, 40EA50[6] |
| Oxide polishing target | — | Thermal oxide thickness range less than 500 A; removal rate 2600–2800 A/min; removal rate can be 2 to 5 times higher on deposited oxides[6] |
| Silicon polishing | — | Global removal around 8 to 10 µm for 10 min[6] |
| Consumable sets | — | Two sets: one for microelectronic layers polishing and one for copper polishing[6] |
| Microelectronic compatibility | — | Not a micro-electronic compatible tool[6] |
| Wafer size support | — | 4", 6", 8"[6] |
| Conditioning type | — | ex-situ[6] |
| Tool type | — | semi-automatic[6] |
| Type | — | semi-automatic system[6] |
| Process | — | polishing and planarization of wafers[6] |