Comparison ledger
Lam Research 2300 Kiyo EX, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 2300 Kiyo EXLam Research | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Lam Research | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research 2300 | Oxford Instruments 100 ICP Fluorine |
| Specifications | ||
| Configuration | Polysilicon[1] | — |
| OEM | Lam Research[1] | — |
| Model | 2300 Kiyo EX[1] | — |
| Description | Polysilicon Etch[2] | — |
| Equipment type | Etch/Ash/Clean - Plasma Processing Equipment[2] | — |
| Currently configured for | 300 mm[2] | — |
| Tool model | KIYOEX[2] | — |
| System power rating | 208 AC 3-Phase[2] | — |
| Loading configuration | 3 Load ports[2] | — |
| Chambers | Chamber 1, Chamber 2, Chamber 3[2] | — |
| Chamber descriptions | KIYOEX, KIYOEX, KIYOEX[2] | — |
| Process Type | Polysilicon Etch[2] | — |
| Wafer Size | 300mm[2] | — |
| Load Ports | 3[2] | — |
| Chamber Type | KIYOEX[2] | — |
| N2 Load Port Vendor | JUSTEM[2] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[3] |
| Cryo DRIE etch rate | — | up to 5 µm/min[3] |
| Wafer size | — | 4 inch, 6 inch, 8 inch (with clamp change)[3] |
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