Waferpedia

Comparison ledger

2300versusPlasmalab 80 Plus RIE

Lam Research 2300, Oxford Instruments Plasmalab 80 Plus RIE, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
2300Lam Research
Plasmalab 80 Plus RIEOxford Instruments
OEMLam ResearchOxford Instruments
CategoryEtchEtch
Wafer size8"8"
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyLam Research 2300Oxford Instruments Plasmalab 80
Cited variants
  • Lam 2300 Etch Chamber[1]
  • Lam 2300[2]
  • Lam 2300, 12" KIYO EXP MRT[2]
  • Lam 2300, 12"[3]
  • 2300 Etch Chamber[1]
  • 2300 KIYO EXP MRT[2]
  • 2300[3]
—
Specifications
3 ChambersInsulating Film, Metal, Ashing[1]—
Wafer sizeWafer set up for 8"[1]Small piece of wafer until max full 8 inches wafer[5]
ConfigurationWith Exelan Flex 45 Dielectric Etch Chamber[1]50/60 Hz[4]
Wafer sizes supported8 inch, 12 inch[1]—
Chamber configuration3 chambers: Insulating Film, Metal, Ashing[1]—
Wafer setupWafer set up for 8 inch[1]—
Dielectric etch chamberExelan Flex 45 Dielectric Etch Chamber[1]—
Included subsystemsHDD & Software included; all pumps, generators & other subsystems included[1]—
CE MarkCE Mark 2023 Vintage[1]—
Configuration (12-inch)KIYO EXP MRT[2]—
OEMLam Research[1]—
Model2300[1]—
CategoryEtch[1]—
Wafer sizes8 inch, 12 inch[1]—
Voltage—415 VAC, 3 Phase[4]
Full Load Amps—25.6 A[4]
Max Flow Rate Per Gas—100 sccm[4]
RF Generator—300 Watt 13.56 MHZ[4]
Table—Cool Down Only (No Heating)[4]
Typical Process Pressure—30 - 100 Mtorr[4]
Pumping System—Corrosion Resistant Turbo Molecular Pump with Rotary Pump[4]
Available Gases in Chamber—Ar, CF4, O2, CHF3, SF6, & He[4]
Phase—3 Phase[5]
Available gas in the chamber—Ar, CF4, O2, CHF3, SF6 & He.[5]
RF generator—300 Watt 13.56MHz[5]
Typical process pressure—30 – 100 mtorr[5]
Pumping system—Corrosion-resistant turbo-molecular pump with rotary pump[5]
Uniformity—5 - 10 % range[6]
Chamber Gases—Ar, CF4, O2, CHF3, SF6, He[4]
Table Type—Cool down only (no heating)[4]
Wafer Size—Small piece of wafer up to full 8 inches[5]
Frequency—50/60 Hz[4]
Available Gases—Ar, CF4, O2, CHF3, SF6, He[4]
Wafer Sizes Supported—2, 3, 4, 5, 6, 8 inch[5]
Dual Chamber Configuration—Available on some units[6]
PECVD Capability—9 inch plate, tested for 2-4 inch wafers[6]

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Sources (7)Every fact above is drawn from these public sources
  1. [1]Equipment inventory listing
  2. [2]Equipment inventory listing
  3. [3]Equipment inventory listing
  4. [4]inventory listing
  5. [5]inventory listing
  6. [6]inventory listing
  7. [7]inventory listing