Comparison ledger
KLA Candela 8520 Surface, KLA Candela 8520 Wafer, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | ||
|---|---|---|
| OEM | KLA | KLA |
| Category | Metrology & Inspection | Metrology & Inspection |
| Wafer size | — | Wafer Thickness 350μm ~ 1100μm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | KLA Candela 8520 | KLA Candela 8520 |
| Specifications | ||
| Configuration | for SiC Wafers[1] | 50/60 Hz[4] |
| Phase | 1 Phase[1] | 1 Phase[5] |
| OEM | KLA[1] | KLA[4] |
| Model | Candela 8520[1] | Candela 8520 Wafer[4] |
| Equipment type | Surface inspection system[1] | Wafer inspection system[4] |
| Category | Metrology & Inspection[2] | Wafer Inspection System[4] |
| Wafer sizes | 6-inch, 8-inch[1] | — |
| Wafer handling | for SiC wafers[2] | — |
| Generation | 2nd generation integrated surface and photoluminescence inspection system[3] | — |
| Inspection method | Automated wafer inspection with statistical process control (SPC) methodology[3] | — |
| Optical measurements | Scatter intensity, topographic variations, surface reflectance, phase shift, photoluminescence[3] | — |
| Voltage | — | 208 VAC[4] |
| Largest Load | — | 8 A[4] |
| Wafer size | — | Wafer Thickness 350μm ~ 1100μm[5] |
| CDA Pressure | — | 100 psi / 689 KPa (± 10% range)[5] |
| Flow | — | 2 SCFM / 80 L/min (± 10% range).[5] |
| AMC | — | maximum concentration of Volatile Organic Compounds (VOC) must be less than 150 ng/l.[5] |
| Moisture Content | — | less than 20 PPM at 1.0 atm, corresponding to a dewpoint of -30° Celsius (-22°F).[5] |
| Vacuum Pressure | — | -680 mm Hg / -90 KPa (± 10% range).[5] |
| Wafer thickness | — | 350μm ~ 1100μm[5] |
| Power | — | 230 V[5] |
| Electrical phase | — | 1 Phase[5] |
| Electrical wiring | — | 3 Wire[5] |
| Current | — | 20 amps[5] |
| Frequency | — | 50/60 Hz[5] |
| Wafer carrier | — | 2 FUP 6 and 8[5] |
| Wafer mapping sensor | — | Micro Optical Sensor[5] |
| Interface | — | SECS-GEM[5] |
| CDA flow | — | 2 SCFM / 80 L/min (± 10% range)[5] |
| Vacuum flow | — | 0.64 SCFM / 18 L/min (± 10% range)[5] |
| Laser 1 | — | 405 nm wavelength, 60 mW power, Class IIIb per CDRH 21CFR 1040[5] |
| Laser 2 | — | 355 nm wavelength, 20 mW power, Class IIIb per CDRH 21CFR 1040[5] |
| Electrical | — | 1 Phase, 3 Wire, 230 V, 20 amps, 50/60 Hz[5] |
| Laser wavelengths | — | 405 nm and 355 nm[5] |
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