Comparison ledger
GCA AS200, SUSS MicroTec MA200 Gen3, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | AS200GCA | MA200 Gen3SUSS MicroTec |
|---|---|---|
| OEM | GCA | SUSS MicroTec |
| Category | Lithography | Lithography |
| Wafer size | 200mm | 200mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | i-line | Gen3 |
| Family | GCA AS200 | SUSS MicroTec MA200 Gen3 |
| Specifications | ||
| Model | AS200[1] | — |
| OEM | GCA[1] | — |
| Machine name | AutoStep 200 DSW i-line Wafer Stepper[1] | — |
| Reduction | 5X[1] | — |
| Maximum wafer size | up to 200 mm wafers[1] | — |
| Wafer stage | 200 mm Wafer Stage[1] | — |
| Optics NA | 0.45 N.A.[1] | — |
| Lens | Tropel i-line Lens[1] | — |
| Exposure field | 15 mm[1] | — |
| Alignment | uDFAS Die-by-Die Alignment[1] | — |
| Illumination | Annular and Quadrupole illumination available[1] | — |
| Feature size specification | 0.65 µm features[1] | — |
| Overlay specification | <0.125 µm using local alignment[1] | — |
| Focus repeatability | <0.2 µm[1] | — |
| Automation | All operations are automated, including wafer loading, aligning, reticle loading and aligning[1] | — |
| Wafer leveling | Used to provide optimum focus range[1] | — |
| Automatic calibrations | All tool calibrations are performed automatically[1] | — |
| Focus compensation | Compensated for lens heating and barometric shifts[1] | — |
| Reticle management | Reticle Management System (up to 10 reticles)[1] | — |
| Reduction factor | 5X[1] | — |
| Exposure wavelength | i-line[2] | — |
| Lens numerical aperture | 0.45[1] | — |
| Lens type | Tropel i-line lens[1] | — |
| Exposure field size | 15mm[1] | — |
| Feature resolution specification | 0.65µm[1] | — |
| Sigma (partial coherence) | 0.5[1] | — |
| Wafer handling | Automatic wafer handler (set for 100mm wafers)[1] | — |
| Wafer stage size | 200mm Wafer Stage[1] | — |
| Reticle capacity | up to 10 reticles[1] | — |
| Reticle size | 5 inch[1] | — |
| Illumination modes | Annular and Quadrupole illumination available[1] | — |
| Focus system repeatability | <0.2µm[1] | — |
| Type | — | Automated system[3] |
| Wafer size | — | up to 200 mm[3] |
| Process | — | Mask Alignment, Exposure[3] |
| Substrate type | — | Wafers and square substrates[4] |
| Exposure modes | — | Proximity, contact, soft contact, hard contact, and vacuum contact exposure[5] |
| Top-side alignment accuracy | — | 0.5 µm[4] |
| Minimum proximity resolution | — | 3.5 µm[4] |
| Minimum vacuum contact resolution | — | <0.8 µm[4] |
| Handling capability | — | Fragile, warped, or ultra-thin wafers down to 50 µm[4] |
| Mask management | — | Integrated mask library stores and manages multiple photomasks[4] |
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