Waferpedia

Comparison ledger

EV 501 Waferversus1 WBS 1 Wafer Substrate

EV Group EV 501 Wafer, Logitech 1 WBS 1 Wafer Substrate, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
EV 501 WaferEV Group
OEMEV GroupLogitech
CategoryPackaging & BondingPackaging & Bonding
Wafer sizeCapable of thermo compression, fusion or anodic wafer bonding—
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyEV Group EV 501 WaferLogitech 1 WBS 1 Wafer Substrate
Cited variants
  • EV 501 Wafer Bonder[1]
—
Specifications
ConfigurationRefurbished[2]—
Wafer sizeCapable of thermo compression, fusion or anodic wafer bonding[2]—
ThicknessMax wafer stack thickness 6 mm[2]—
Bottom side heater550°C max. in 1°C steps[2]—
Temperature uniformity± 1,5 %[2]—
Bonding capabilityCapable of thermo compression, fusion or anodic wafer bonding[2]—
Bond chamberBond chamber for small pieces up to 150 mm wafers (with correct tooling)[2]—
Vacuum pumpTurbo Pump[2]—
Power supplyHigh voltage power supply for anodic bonding (additional tooling may be required)[2]—
ElectronicsElectronics Rack[2]—
Control/softwareComputer & Software[2]—
DisplayLCD Monitor[2]—
PumpRoughing Pump[2]—
ManualOperations Manual[2]—
ConditionRefurbished[2]—
Wafer sizes supported2, 3, 4, 5, 6, 12 inch[2]—
Max wafer stack thickness6 mm[2]—
Bottom side heater max temperature550°C max.[2]—
Heater temperature step1°C steps[2]—
Roughing pumpRoughing Pump[2]—
High voltage power supplyHigh voltage power supply for anodic bonding (additional tooling may be required)[2]—
Electronics rackElectronics Rack[2]—
Computer & softwareComputer & Software[2]—
Wafer Size—6 inch[3]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]waferpedia.comwaferpedia.com
  2. [2]inventory listing
  3. [3]Equipment inventory listing