Waferpedia

Comparison ledger

100versus350W MJB3 Mask

CEE 100, SUSS MicroTec 350W MJB3 Mask, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
100CEE
350W MJB3 MaskSUSS MicroTec
OEMCEESUSS MicroTec
CategoryLithographyLithography
Wafer size6"Wafer Equipment
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyCEE 100SUSS MicroTec 350W MJB3 Mask
Cited variants—
Specifications
Tool typeSpray Developer[1]—
Accepts wafer sizeup to 6" wafers[2]—
Programmable programs10 programs[2]—
Steps per programup to 10 steps[2]—
Programmable step parametersAcceleration, Speed, Time[2]—
Associated documentCEE Model 100CB Spinner.doc[2]—
Wafer sizeUp to 6 inches[2]Wafer Equipment[3]
Programs10 programs each with up to 10 steps[2]—
Control parametersAcceleration, Speed, Time[2]—
- Model—MJB3 Main System[3]
- Manufacturer—Suss MicroTec / Karl Suss[3]
- Max Wafer Size—3" Diameter[3]
- Eyepieces—10x[3]
- Objectives—3.5x and 10x[3]
- Exposure Mode—Vacuum Contact, Hard & Soft[3]
- Exposure Resolution—0.8 Microns (under optimum conditions)[3]
- Alignment Resolution—0.25um (operator dependant)[3]
Alignment mode—Top Side Alignment[3]
Power supply—CIC 500[3]
Lamphouse—350 watt[3]
Exposure optics—UV400 exposure optics for 365nm and 405nm exposure[3]
Microscope—Suss M230 Splitfield Microscope[3]
Maskholder—1 included for 4"x4" masks[3]
Wafer chuck—1 included[3]
Bulb—Brand new 350W bulb, qty. 1 included[3]
Manual—Operations Manual for Suss MJB3 Mask Aligner[3]
Configured for—Top Side Alignment[3]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]nanofab.ece.cmu.edunanofab.ece.cmu.edu
  2. [2]nanofab.utah.edunanofab.utah.edu
  3. [3]dealer listingwotol.com