Comparison ledger
Axcelis 200 PCU, Nissin Exceed 3000 AH, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 200 PCUAxcelis | Exceed 3000 AHNissin |
|---|---|---|
| OEM | Axcelis | Nissin |
| Category | Ion Implantation | Ion Implantation |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | 2000 Vintage | — |
| Control system | — | — |
| Generation | — | — |
| Family | Axcelis NV GSD 200 | Nissin Exceed 3000 AH |
| Cited variants |
| |
| Specifications | ||
| P/N | SC 4840 A[4] | — |
| Frequency | 50 Hz[4] | — |
| Phase | 3 Phase[4] | — |
| Voltage | 400 V[4] | — |
| Configuration | — | Medium current[5] |
| Type | — | medium current ion implanter[6] |
| Wafer size | — | 6-inch wafers[6] |
| Process mode | — | nanometer-scale process modes[7] |
| Transport system | — | handles thin wafers and other various substrates[7] |
| Average autotune time | — | less than 2 minutes[7] |
| Beam angle feedback | — | horizontal and vertical beam angle feedback system with multiple Faraday cup system[7] |
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