Waferpedia

Comparison ledger

E 2000 Epitaxial ReactorversusMVD300

ASM E 2000 Epitaxial Reactor, SPTS MVD300, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
MVD300SPTS
OEMASMSPTS
CategoryDepositionDeposition
Wafer size200mm200mm
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyASM E 2000 Epitaxial ReactorSPTS MVD300
Cited variants
  • ASM E 2000 Epitaxial Reactor, 8 inch[1]
  • ASM E 2000 Epitaxial Reactor, 6 inch[2]
  • ASM E 2000 (6 inch version)[2]
Specifications
Supply Voltage/ Freq480/ 50[4]—
System HandLeft Hand[4]—
Monitor TypeFlat Panel[4]—
Maint ConsoleMini Maint[4]—
CPU68040[4]—
Software Version7.65[4]—
CommsHSMS[4]—
RP/ ATMRP[4]—
Vacuum Load LocksNo[4]—
WHC Gate ValveSwing[4]—
WHC Robot ArmWide[4]—
Reactor IsolationHVA[4]—
ATM ValveVAT[4]—
Pressure ControllerMKS 152 Analogue[4]—
PCV TypeMKS 253B[4]—
Choke ValveYes[4]—
RP OrientationBottom Feed[4]—
Gas Panel OrientationTop Feed[4]—
Main H2/N2100slm[4]—
Cross Purge ValvesYes[4]—
Wafer Size200mm[5]—
Supply Voltage / Freq480 / 50[1]—
ConfigurationRP[1]—
HCL Hi20slm[7]—
Supply Voltage / Frequency480 V / 50 Hz[4]—
Maintenance ConsoleMini Maint[4]—
CommunicationsHSMS[4]—
Main H2/N2 Flow100 slm[4]—
Shaft MFC5 slm[4]—
P Dopant LoopYes[4]—
N Dopant LoopYes, Teed PH3/AsH3[4]—
Aux1 Gas (SiH2Cl2)500 sccm[4]—
Aux2 Gas (SiH4)105 sccm[4]—
HCL High20 slm (some 30 slm)[4]—
HCl Low2000 sccm (some 1000 sccm, 500 sccm)[4]—
TCS25 gpm LVC[4]—
DCS CabinetYes[4]—
TCS Mini Bubbler10L LPE[4]—
Gas DetectionGastec H2/HCl[4]—
Temperature ControllerFoxboro[4]—
Analog Ratio ControlYes[4]—
Wafer Size Kits Available100 mm, 150 mm, 200 mm[1]—
Unit Vintage (example unit)2001[1]—
OEMASM[5]—
ModelE 2000[5]—
Equipment nameASM E 2000 Epitaxial Reactor[5]—
CategoryDeposition[5]—
Wafer sizes8 inch[5]—
Supply voltage / frequency480 / 50[5]—
Dep/Vent transition valvesYes[5]—
ATM/RP ventYes[5]—
P loop MFCs Dil/SRC/INJ20slm/175/175[5]—
N loop MFCs Dil/SRC/INJ20slm/175/175[5]—
Aux1SiH2Cl2 500sccm[5]—
Aux2SiH4 105sccm[5]—
Aux3None[5]—
Aux4GeH4 2000sccm[5]—
Aux5GeH4 175sccm[5]—
HCl HiYes 20slm[5]—
Precision vent matchingYes[5]—
System type—Molecular Vapor Deposition (MVD) system[3]
Configured models—MVD300 / MVD300E[3]
Target manufacturing use—High volume manufacturing applications[3]
Processing mode—Batch processing[3]
Wafer handling—200mm wafers (Pod loader or EFEM available); 300mm wafers (EFEM enabled)[3]
Other substrate formats—Singulated die on tape frames; components on trays; custom substrate fixturing available[3]
Precursors—Up to 4 precursors[3]
Integrated functions—Integrated plasma surface treatment and chamber clean capability[3]
Automation—Automated process sequence routines[3]
Diagnostics—Extensive self-diagnostic and data logging capability[3]
Reliability—Exceptional reliability[3]
Process compatibility—MVD and ALD-capable[3]
Wafer size—200mm (Pod loader or EFEM) / 300mm (EFEM)[3]
Number of precursors—Up to 4[3]
Plasma treatment—Integrated plasma surface treatment and chamber clean capability[3]
Substrate types—Wafers, singulated die on tape frames, components on trays, custom fixturing[3]
ALD capability—MVD and ALD-capable[3]

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Sources (7)Every fact above is drawn from these public sources
  1. [1]Equipment inventory listing
  2. [2]Equipment inventory listing
  3. [3]web.archive.orgweb.archive.org
  4. [4]inventory listing
  5. [5]inventory listing
  6. [6]inventory listing
  7. [7]inventory listing