Waferpedia

Comparison ledger

VIISta Plad High CurrentversusViision 200

Applied Materials VIISta Plad High Current, Varian Viision 200, side by side. Every value shown is drawn from the cited encyclopedia entries.

Documented as functional equivalents— Same function class: Ion Implantation, null[1]
Side-by-side comparison of selected equipment models
Attribute
VIISta Plad High CurrentApplied Materials
OEMApplied MaterialsVarian
CategoryIon ImplantationIon Implantation
Wafer size——
Process node——
Introduced——
Production run—1996–
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials VIISTAVarian Viision 200
Cited variants—
  • Viision 200, 8" - Medium Current[2]
  • Viision 200, 8" - High Current - 3 Phase - 5 Wire - 208 Volt - 50/60 Hz 2000 Vintage[3]
  • Viision 200, 8" - High Current - 3 Phase - 5 Wire - 208 Volt - 50/60 Hz 2013 Vintage[4]
  • VIISion 80LE[5]
  • VIISion 200 PLUS2[5]
  • Viision 200 (Medium Current)[2]
  • VIISion 200 PLUS[5]
Specifications
ConfigurationChamber only[1]Medium Current[2]
Phase—3 Phase[3]
Wafer size—8 inch (200 mm)[2]
Process type—Batch[5]
Current type—High Current[5]
Energy range (VIISion 200 PLUS2)—Up to 200 keV[5]
Energy range (VIISion 80LE)—250 eV to 80 keV[5]
Electrical requirements—3 Phase, 5 Wire, 208 V, 50/60 Hz[3]
Voltage—208 Volt[3]
Frequency—50/60 Hz[3]
Vintage—2000[3]
Uptime—over 85%[5]
Equipment type—Ion implanter[2]
Model—Viision 200[2]
Current class—High current[5]

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Sources (5)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]Equipment inventory listing
  3. [3]Equipment inventory listing
  4. [4]Equipment inventory listing
  5. [5]web.archive.orgweb.archive.org