Waferpedia

Comparison ledger

VIISta 80 High Currentversus160 XP

Applied Materials VIISta 80 High Current, Varian 160 XP, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
VIISta 80 High CurrentApplied Materials
160 XPVarian
OEMApplied MaterialsVarian
CategoryIon ImplantationIon Implantation
Wafer sizeLaser Wafer Mapping—
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials VIISTAVarian 160 XP
Cited variants—
Specifications
Line Voltage3 Phase, 208 V[2]—
Line Frequency50 / 60 Hz[2]—
UPSEATON 9 PX 3000[2]—
ConfigurationChamber A - DPN (Aluminum)[2]—
He MFC SizeOptional[2]—
N 2 MFC Size1 slm (for 500 sccm in the recipe)[2]—
TypeUES with Turbo Foreline[2]—
Cassette Stage200 mm (8") Standard[2]—
Wafer sizeLaser Wafer Mapping[2]—
Lamp ColorsRed, Orange, Green[2]—
ChillerAffinity RAA 012 K CE 55 CBC[2]—
DI CartVIISta 80 with B-Pure Filters[2]—
ManufacturerApplied Materials / Varian[3]—
ModelVIISta 80[3]—
Wafer Size200 mm (8 inch)[2]—
Gas Box5 sticks, HP and SDS 2 in use; He MFC optional; N2 MFC 1 slm[2]—
Loadlock / Cassette2 chambers, UES with Turbo Foreline; Cassette Stage 200 mm (8") Standard with Laser Wafer Mapping[2]—
Vintage2000[2]—
Laser Wafer MappingYes[2]—
Loadlock Chambers2, Type UES with Turbo Foreline[2]—
Year of Manufacture2000[2]—
SMIF Version200 mm SMIF[4]—
Manufacturing Date2000-12-01[4]—
Configuration (160 XP Ion variant)—150mm High Current IMP[1]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]waferpedia.comwaferpedia.com
  2. [2]inventory listing
  3. [3]Equipment inventory listing
  4. [4]fabsurplus.comfabsurplus.com