Comparison ledger
Applied Materials P5000, Kurt Lesker 150LX, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | P5000Applied Materials | 150LXKurt Lesker |
|---|---|---|
| OEM | Applied Materials | Kurt Lesker |
| Category | Deposition | Deposition |
| Wafer size | 150mm | 150mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials P5000 | Kurt Lesker 150LX |
| Specifications | ||
| Process type | Dielectric PECVD[1] | Plasma-enhanced atomic layer deposition (PE-ALD)[2] |
| Dedicated chambers | Two[1] | — |
| Silicon dioxide chemistry | TEOS/O2[1] | — |
| Silicon nitride chemistry | SiH4/NH3 capable[1] | — |
| Maximum wafer size | 8 inches[1] | — |
| Film thickness | Multiple microns thick[1] | — |
| Nominal operating temperature | ~400C[1] | — |
| Number of chambers | 2[1] | — |
| Chemistry for silicon dioxide | TEOS/O2[1] | — |
| Chemistry for silicon nitride | SiH4/NH3[1] | — |
| Deposited film thickness | Multiple microns[1] | — |
| Operating temperature | ~400°C[1] | — |
| OEM | — | Kurt Lesker[2] |
| Model | — | ALD-150LX[2] |
| Type | — | Plasma-enhanced atomic layer deposition (PE-ALD) system[2] |
| Location | — | Cleanroom[2] |
| Operating mode | — | Load-locked system[2] |
| In situ metrology | — | Film Sense FS-1 Multi-Wavelength ellipsometer[2] |
| Wafer size | — | Up to full 150 mm (6") wafers[2] |
| Process | — | Plasma-enhanced atomic layer deposition (PE-ALD)[2] |
| Substrate size | — | Up to 150mm[3] |
| Substrate heating | — | Up to 600°C[3] |
| Load lock | — | Load-locked system[2] |
| ALD process modes | — | Plasma Enhanced, Thermal only, Dynamic and Static Exposure for HAR, Variable Residence Mode (VRM)[3] |
| Ellipsometry | — | Standard on chamber[3] |
| Precursor inlets to chamber | — | Four (4), standard on chamber, independently heated[3] |
| Precursor sources | — | Up to twelve (12)[4] |
| Precursor types | — | Up to fourteen (14)[3] |
| Plasma source | — | 1 kW RF remote ICP[5] |
| Substrate temperature | — | Up to 600°C[3] |
| Process modes | — | Plasma enhanced, thermal only, dynamic and static exposure for HAR, variable residence mode (VRM)[3] |
| Ellipsometry ports | — | Standard on chamber[3] |
| Precursor inlets | — | Four standard on chamber, independently heated[3] |
| Precursor capacity | — | Up to fourteen vapor draw flow through, bubbler, ozone pulsed gas plasma process gases[3] |
| Substrate handling | — | Load locked single wafer transfer[5] |
| Process gases | — | Argon, oxygen, nitrogen, hydrogen, ammonia, ozone[5] |
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