Waferpedia

Comparison ledger

P 5000 MxP+versus100 ICP Fluorine

Applied Materials P 5000 MxP+, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
P 5000 MxP+Applied Materials
100 ICP FluorineOxford Instruments
OEMApplied MaterialsOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials P 5000 MxP+Oxford Instruments 100 ICP Fluorine
Specifications
Voltage208 V, 125.0 A, 50/60 Hz, 3 Phase[1]—
Largest Load Ampere Rating125 Amps[1]—
MAximum Ampere Rating90 KVA[1]—
Full Load Current250 Amps[1]—
Interrupt Current10,000 Amps I.C.[1]—
Wafer Set Size8"[1]—
Chamber AMxP+ Etch[1]—
Chamber BMxP+ Etch[1]—
Chamber CMxP+ Etch[1]—
ConfigurationChamber A:[1]—
RF GeneratorOEM 12 B[1]—
Baraton1 Torr[1]—
Slit ValveStandard[1]—
Baratron1 Torr[1]—
MakeApplied Materials[1]—
ModelP 5000 MxP+[1]—
CategoryEtcher[1]—
Wafer sizes8, 6 inch[1]—
Wafer set size6"[2]—
Chamber A RF generatorOEM 12 B[1]—
Chamber B RF generatorOEM 12 B[1]—
Chamber C RF generator12 B[1]—
Electrical requirementLine voltage 200/208 V[1]—
Mainframe typeStandard[1]—
Robot typeMK II[1]—
Load lock cassetteManual 2 Cassette[1]—
Storage elevator15 slots[1]—
Power rackShrink[1]—
Line Frequency50/60 Hz[1]—
Line Voltage200/208 V[1]—
Line Amperage123 Amps[1]—
3rd MonitorPenulator[1]—
OEMApplied Materials[2]—
Etch Gases—SF6, CF4, O2, Ar, N2, CHF3, C4F8[4]
Cryo DRIE etch rate—up to 5 µm/min[4]
Wafer size—4 inch, 6 inch, 8 inch (with clamp change)[4]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]inventory listing
  3. [3]waferpedia.comwaferpedia.com
  4. [4]nanofab.utah.edunanofab.utah.edu