Waferpedia

Comparison ledger

P 5000 Mark II Dielectricversus100 ICP Fluorine

Applied Materials P 5000 Mark II Dielectric, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
P 5000 Mark II DielectricApplied Materials
100 ICP FluorineOxford Instruments
OEMApplied MaterialsOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials P 5000 Mark IIOxford Instruments 100 ICP Fluorine
Specifications
ConfigurationMxP+[1]—
OEMApplied Materials[1]—
ModelP 5000 Mark II[1]—
Tool typeDielectric Etch[1]—
Wafer size6 inch[1]4 inch, 6 inch, 8 inch (with clamp change)[3]
Etch Gases—SF6, CF4, O2, Ar, N2, CHF3, C4F8[3]
Cryo DRIE etch rate—up to 5 µm/min[3]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]inventory listing
  3. [3]nanofab.utah.edunanofab.utah.edu