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Comparison ledger

0041-26723 Bonded AssemblyversusEV 501 Wafer

Applied Materials 0041-26723 Bonded Assembly, EV Group EV 501 Wafer, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
EV 501 WaferEV Group
OEMApplied MaterialsEV Group
CategoryPackaging & BondingPackaging & Bonding
Wafer size—Capable of thermo compression, fusion or anodic wafer bonding
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0041-26723 Bonded AssemblyEV Group EV 501 Wafer
Cited variants—
  • EV 501 Wafer Bonder[1]
Specifications
Configuration—Refurbished[2]
Wafer size—Capable of thermo compression, fusion or anodic wafer bonding[2]
Thickness—Max wafer stack thickness 6 mm[2]
Bottom side heater—550°C max. in 1°C steps[2]
Temperature uniformity—± 1,5 %[2]
Bonding capability—Capable of thermo compression, fusion or anodic wafer bonding[2]
Bond chamber—Bond chamber for small pieces up to 150 mm wafers (with correct tooling)[2]
Vacuum pump—Turbo Pump[2]
Power supply—High voltage power supply for anodic bonding (additional tooling may be required)[2]
Electronics—Electronics Rack[2]
Control/software—Computer & Software[2]
Display—LCD Monitor[2]
Pump—Roughing Pump[2]
Manual—Operations Manual[2]
Condition—Refurbished[2]
Wafer sizes supported—2, 3, 4, 5, 6, 12 inch[2]
Max wafer stack thickness—6 mm[2]
Bottom side heater max temperature—550°C max.[2]
Heater temperature step—1°C steps[2]
Roughing pump—Roughing Pump[2]
High voltage power supply—High voltage power supply for anodic bonding (additional tooling may be required)[2]
Electronics rack—Electronics Rack[2]
Computer & software—Computer & Software[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]waferpedia.comwaferpedia.com
  2. [2]inventory listing