Comparison ledger
Applied Materials 0010-21246 Part, Hitachi CG5000, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-21246 PartApplied Materials | CG5000Hitachi |
|---|---|---|
| OEM | Applied Materials | Hitachi |
| Category | — | — |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | 2014 Date of manufacture |
| Control system | — | — |
| Generation | — | — |
| Family | — | Hitachi CG5000 |
| Specifications | ||
| Date of Manufacture | — | 2014-05-01[1] |
| Currently Configured for | — | 300mm[1] |
| Tool current condition | — | Power on, not on production[1] |
| Process | — | Scanning Defect[1] |
| Software Version | — | 58.52[1] |
| System Power Rating | — | 208 AC 1 Phase[1] |
| Loading Configuration | — | 3 L/Ps[1] |
| Technology | — | CD-SEM[2] |
| Application | — | Applications for wafers[2] |
| Measurement characteristics | — | measurement, high-resolution, high-throughput[2] |
| Configured wafer size | — | 300mm[1] |
| Year(s) | — | 2014[1] |
| Year of Manufacture | — | 2014-05-01[1] |
| Wafer Size | — | 300mm[1] |
| Electron Beam Voltage (Postdevelop L/S CD) | — | 500 eV[3] |
| Electron Beam Voltage (Postetch LCDU) | — | 800 eV[3] |
| Technology Node | — | sub-22nm[2] |
| Measurement Type | — | CD-SEM[1] |
| Measurement type | — | critical-dimension (CD) measurement[1] |
| Performance | — | high-resolution, high-throughput, high-repeatability[2] |
| Calibration | — | enhanced automatic calibration[2] |