Comparison ledger
Veeco RF 350, Veeco RF 350 S, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | RF 350Veeco | RF 350 SVeeco |
|---|---|---|
| OEM | Veeco | Veeco |
| Category | Etch | — |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Veeco RF 350 | Veeco RF 350 |
| Specifications | ||
| Configuration | Missing Parts[1] | 1 chamber[3] |
| Category | Etch[2] | — |
| Tool type | Ion Beam Etcher (IBE)[2] | — |
| Process modes | Ion Beam Etching (IBE) and Reactive Ion Beam Etching (RIBE)[2] | — |
| Ion source type | inductively coupled, filamentless RF ion source[2] | — |
| Ion source diameter | 300 mm[2] | — |
| Substrate loading | single-substrate loadlocked (or configurable to cassette-to-cassette)[2] | — |
| Wafer size | single 6" (150 mm)[2] | — |
| Loading | single 6" wafer loading[2] | — |
| Applications | MEMS, semiconductor fabrication, and data storage[2] | — |
| Missing parts | Missing parts[1] | — |
| Gas | — | Argon[3] |
| OS | — | Windows 2000[3] |
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