Comparison ledger
Oxford Instruments PlasmaPro 100 Cobra, STS Multiplex ICP, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | PlasmaPro 100 CobraOxford Instruments | |
|---|---|---|
| OEM | Oxford Instruments | STS |
| Category | Etch | Etch |
| Wafer size | 100mm | 100mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | DOS |
| Generation | — | — |
| Family | Oxford Instruments PlasmaPro 100 | STS Multiplex ICP |
| Specifications | ||
| Configuration | With HDD and Software[2] | — |
| Etch plasma type | Inductively Coupled Plasma (ICP)[3] | — |
| Process gases | O2 (100sccm), O2 (10sccm), SF6, CF4, BCl3, Ar, Cl2, HBr[3] | SF6, C4F8, O2, Ar[1] |
| Mass flow controllers | 8 digital MFCs[3] | — |
| Chuck type | Electrostatic clamping and biasing chuck[3] | Electrostatic clamping and biasing chuck[4] |
| Chuck temperature range | 20°C to 60°C[3] | — |
| End-point detection | Laser reflectometry/interferometry and Optical Emission Spectroscopy (OES)[3] | — |
| Type | Plasma etching tool[3] | load-locked inductively coupled plasma etch system[1] |
| Processing diameter | Full wafer 100 mm[3] | — |
| Plasma type | High density plasma of ICP (Inductively Coupled Plasma) type[3] | — |
| Chuck | Electrostatic clamping and biasing chuck controlled in temperature[3] | biasing chuck controlled in temperature[4] |
| Supported gases | O2 (100 sccm), O2 (10 sccm), SF6, CF4, BCl3, Ar, Cl2, HBr[3] | — |
| Endpoint detection | Laser reflectometry/interferometry and optical emission spectroscopy[3] | fitted with an End Point Detection (EPD) system[4] |
| Wafer size | 100 mm (full wafer)[3] | 100 mm wafers[1] |
| Number of MFCs | 8 digital Mass Flow Controllers[3] | — |
| Gases available | O2 (100sccm), O2 (10sccm), SF6, CF4, BCl3, Ar, Cl2, HBr[3] | — |
| Etch materials | Al, Ti, TiN, Si, SiO2, Si3N4, polyimide, Al2O3[3] | — |
| Gases | O2 (100 sccm), O2 (10 sccm), SF6, CF4, BCl3, Ar, Cl2, HBr[3] | — |
| Compatibility | Microelectronic compatible[3] | microelectronic compatible equipment[5] |
| Tool type | — | load-locked, inductively coupled plasma etch system[1] |
| Process | — | deep silicon etching using the Bosch process[1] |
| Carrier requirement | — | Wafers smaller than 100 mm and irregularly shaped samples must be placed on a 100 mm carrier[1] |
| Platen size | — | 100 mm[1] |
| ICP power range | — | 0–900 Watts[1] |
| Bias power range | — | 0–30 Watts[1] |
| MFC flow range - SF6 | — | 0–300 sccm[1] |
| MFC flow range - C4F8 | — | 0–200 sccm[1] |
| MFC flow range - O2 | — | 0–100 sccm[1] |
| MFC flow range - Ar | — | 0–100 sccm[1] |
| Pressure range | — | < 90 mTorr[1] |
| Backside cooling | — | Helium[1] |
| Clamping | — | Clamped[1] |
| Selectivity to photoresist | — | 50:1[1] |
| Selectivity to wet thermal SiO2 | — | 100:1[1] |
| Typical repeatable aspect ratio | — | 10:1[1] |
| OEM | — | STS[4] |
| Model | — | Multiplex ICP[4] |
| Wafer Size | — | 4 inches and 6 inches wafers[4] |
| Plasma Type | — | Inductively Coupled Plasma (ICP)[4] |
| RF Frequency (ICP source) | — | 13.56 MHz[4] |
| Substrate Bias Power (maximum) | — | 300 W[4] |
| Substrate Chuck Temperature | — | 20°C[4] |
| Substrate Clamping | — | Electrostatic clamping[4] |
| Load Lock Type | — | Transfer loadlock with high vacuum during loading/unloading[4] |
| Materials Etched | — | Insulators (SiO2, Si3N4, SiC), silicon, metals (Al Alloys, Pt, Ti), some polymers[4] |
| Wafer handling | — | smaller wafers and irregularly shaped samples placed on a 100 mm carrier[1] |
| Mask materials | — | photoresist and silicon dioxide (SiO2)[1] |
| Applications | — | etching insulators, silicon, metals, and some polymers[4] |
| Dedicated etch materials at CMi | — | metals, quartz, and polyimide[4] |
| Temperature control | — | 20°C[4] |
| Wafer sizes supported | — | 4 inches and 6 inches[4] |
| Max RF generator power | — | 300 W[4] |
| Control software | — | entirely computer controlled[4] |
| Substrate holder RF biasing power | — | 300 W maximum[4] |
| Number of gas MFCs | — | 8[4] |
| Pumping system | — | 1000 l/s turbo pump[4] |
| Base pressure (without process) | — | few 10^-7 mb[4] |
| Wafer clamping | — | Electrostatic clamping with helium backside cooling[4] |
| End Point Detection | — | Yes[4] |
| Etching materials (general) | — | Insulators (SiO2, Si3N4, SiC), silicon, metals (Al alloys, Pt, Ti), polymers[4] |
| Al etch rate (standard Cl2/BCl3 process) | — | 0.2 to 0.5 um/min[4] |
| Si etch rate (standard Cl2 process) | — | 0.35 um/min[4] |
| Polyimide etch rate (oxygen chemistry) | — | >1 um/min[4] |
| Chemistry | — | chlorine and bromine chemistry[5] |
| Wafer compatibility | — | Adaptable for 4 inches and 6 inches wafers[4] |
| Control | — | Entirely computer controlled[4] |
| End point detection | — | End Point Detection (EPD) system[4] |
| Bias RF power maximum | — | 300 W maximum[4] |
| ICP source | — | Antenna connected to an RF power supply and wrapped around an alumina cylinder[4] |
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