Comparison ledger
Oxford Instruments Plasmalab-80plus-Cloey-S, Plasma-Therm 770, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Plasmalab-80plus-Cloey-SOxford Instruments | 770Plasma-Therm |
|---|---|---|
| OEM | Oxford Instruments | Plasma-Therm |
| Category | Etch | Etch |
| Wafer size | 100mm | 100mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments Plasmalab-80plus-Cloey-S | Plasma-Therm 770 |
| Specifications | ||
| Process gases | BCl3, Cl2, N2, CF4, O2, Ar[1] | — |
| Use | Etching of compound semiconductors and metals[1] | — |
| Allowed masks | Photoresist and dielectrics[1] | — |
| Platen size | 238 mm[1] | — |
| Power range | < 270 Watts[1] | — |
| MFC flow range - BCl3 | 0 – 100 sccm[1] | — |
| MFC flow range - Cl2 | 0 – 50 sccm[1] | — |
| MFC flow range - CF4 | 0 – 100 sccm[1] | — |
| MFC flow range - O2 | 0 – 50 sccm[1] | — |
| MFC flow range - Ar | 0 – 100 sccm[1] | — |
| MFC flow range - N2 | 0 – 100 sccm[1] | — |
| Pressure range | < 250 mTorr[1] | — |
| Wafer size | 100 mm designed size; 200 mm maximum[1] | — |
| Manufacturer | — | Plasmatherm (Unaxis)[2] |
| Model | — | Plasma-Therm 770 SLR series[2] |
| Tool type | — | Dry Etch[2] |
| System type | — | Fluorine-based ICP etcher with loadlock[2] |
| Plasma source | — | Inductively Coupled Plasma (ICP) coil[2] |
| Substrate bias | — | Capacitively coupled substrate RF supply[2] |
| ICP coil power | — | 1000 W at 2 MHz[2] |
| Substrate bias power | — | 500 W at 13.56 MHz[2] |
| Available gases | — | C4F8, SF6, O2, Ar, N2, CHF3, CF4[2] |
| Backside cooling | — | Helium backside cooling[2] |
| Chuck temperature | — | 10°C standard[2] |
| Wafer handling | — | Single 100 mm / 4-inch wafer handling with physical topside clamp contacting the outer 5 mm of the wafer[2] |
| Control system | — | Windows-based computer control of process and wafer handling[2] |
| Endpoint monitoring | — | In-situ laser monitor with camera and simulation software[2] |
| Number of MFC gas controllers | — | 8[3] |
| Gases (chlorine configuration) | — | N₂, O₂, CHF₃, AR, CH₄, CL₂, BCL₃, CF₄[3] |
| Wafer size range (with appropriate kit) | — | 2" to 8"[3] |
| Gases (previous usage, chlorine configuration) | — | N₂, O₂, He, CHF₃, Cl₂, BCl₃[4] |
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