Comparison ledger
Oxford Instruments 100 ICP Fluorine, Ulvac NE 950, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | NE 950Ulvac |
|---|---|---|
| OEM | Oxford Instruments | Ulvac |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | Ulvac NE 950 |
| Cited variants | — | |
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[2] | — |
| Cryo DRIE etch rate | up to 5 µm/min[2] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[2] | 2" to 12" wafers[4] |
| Manufacturer | — | Ulvac[3] |
| Model | — | NE 950[3] |
| Category | — | Etch[4] |
| Tool type | — | ICP-RIE (Inductively Coupled Plasma - Reactive Ion Etch) system[4] |
| Wafer description | — | chamber described for 2" to 12" wafers[4] |
| Process type | — | ICP-RIE (Inductively Coupled Plasma - Reactive Ion Etch)[4] |
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