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Comparison ledger

100 ICP FluorineversusTSP 305 SCCM SE+ Oxide

Oxford Instruments 100 ICP Fluorine, Tokyo Electron TSP 305 SCCM SE+ Oxide, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
100 ICP FluorineOxford Instruments
OEMOxford InstrumentsTokyo Electron
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyOxford Instruments 100 ICP FluorineTokyo Electron TSP 305 SCCM SE+ Oxide
Specifications
Etch GasesSF6, CF4, O2, Ar, N2, CHF3, C4F8[1]—
Cryo DRIE etch rateup to 5 µm/min[1]—
Wafer size4 inch, 6 inch, 8 inch (with clamp change)[1]—
Vintage—2006, 2007, 2008[2]
Wafer Size—12"[3]
Carrier—FOUP (Comply with SEMI E47.1, 25 wafers)[3]
Interface—5 Carrier stage (Continuous flow operation) with Semi compliant MENV and FIMS assemblies[3]
Process Chambers—4 chambers, SCCM Oxide with Y2O3 coating[3]
End Point Detector—SE2000ii[3]
ESC Type—Ceramics ESC with STD Vpp[3]
Focus Ring—3.4mm[3]
TMP—TMP-3403LMC-T4(VG300) (SHIMADZU)[3]
Dry Pump—ESR80WN, KEG approved[3]
APC—Pendulum Motion Dia., 320mm(VAT), R.T.~90deg[3]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]nanofab.utah.edunanofab.utah.edu
  2. [2]Equipment inventory listing
  3. [3]achilles-tech.comachilles-tech.com