Comparison ledger
Oxford Instruments 100 ICP Fluorine, Tegal 901ACS, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | 901ACSTegal |
|---|---|---|
| OEM | Oxford Instruments | Tegal |
| Category | Etch | Etch |
| Wafer size | — | 75 mm, 100 mm, 125 mm, and 150 mm diameter wafers; 4-inch square wafers |
| Process node | — | 1 micron |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | Tegal 901ACS |
| Cited variants | — | |
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[2] | — |
| Cryo DRIE etch rate | up to 5 µm/min[2] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[2] | — |
| System type | — | Wide-gap diode reactor system[1] |
| Process type | — | Low-temperature plasma etch operations[1] |
| Wafer diameters | — | 75 mm, 100 mm, 125 mm, and 150 mm diameter wafers[1] |
| Square wafer size | — | 4-inch square wafers[1] |
| Minimum feature size | — | 1 micron[1] |
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