Comparison ledger
Oxford Instruments 100 ICP Fluorine, Tegal 901, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | 901Tegal |
|---|---|---|
| OEM | Oxford Instruments | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | Tegal 901 |
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[1] | — |
| Cryo DRIE etch rate | up to 5 µm/min[1] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[1] | 3 inch, 100 mm to 150 mm[4] |
| Configuration | — | Poly[2] |
| Primary process | — | non-critical silicon nitride and photoresist trim[4] |
| Reactor type | — | wide gap RF diode reactor[4] |
| Temperature regime | — | low temperature plasma etch[4] |
| Wafer handling | — | no wafer clamps or electrostatic chucks[4] |
| Additional process | — | poly etching[2] |
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