Comparison ledger
Oxford Instruments 100 ICP Fluorine, Plasma-Therm Versaline ICP, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | Versaline ICPPlasma-Therm |
|---|---|---|
| OEM | Oxford Instruments | Plasma-Therm |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | Plasma-Therm Versaline ICP |
| Cited variants | — | |
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[2] | — |
| Cryo DRIE etch rate | up to 5 µm/min[2] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[2] | — |
| Configuration | — | 4 Process Modules[3] |
| RF Power Supply | — | 500 W[4] |
| Wafer Size | — | 4" wafers or smaller samples mounted to 4" carrier wafers[4] |
| Gases Available | — | Cl2, BCl3, Ar, O2[4] |
| ICP Source Frequency | — | 2MHz[1] |
| Substrate Bias Frequency | — | 13.56MHz (optional 40MHz)[1] |
| Substrate Temperature Control | — | Backside helium cooling with mechanical or electrostatic clamping[1] |
| Control System | — | Cortex control system with EndpointWorks[1] |
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