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Comparison ledger

100 ICP FluorineversusSLR 770 ICP Deep Silicon

Oxford Instruments 100 ICP Fluorine, Plasma-Therm SLR 770 ICP Deep Silicon, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
100 ICP FluorineOxford Instruments
OEMOxford InstrumentsPlasma-Therm
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyOxford Instruments 100 ICP FluorinePlasma-Therm SLR 770
Specifications
Etch GasesSF6, CF4, O2, Ar, N2, CHF3, C4F8[1]—
Cryo DRIE etch rateup to 5 µm/min[1]—
Wafer size4 inch, 6 inch, 8 inch (with clamp change)[1]—
Configuration—Load lock shuttle lock transfer[2]
Process Gas—O2, Ar, SF6, C4F6[2]
Chiller—Neslab HX300[2]
Power Box—Square D[2]
Manufacturer—Plasma-Therm[2]
Model—SLR 770[2]
Category—Etch[2]
Wafer sizes—4 inch[2]
Tool type—Single-chamber inductively coupled plasma etcher[3]
Wafer handling—Load lock shuttle lock transfer[2]
Load lock—Single wafer semi-auto load lock[4]
Application—Deep silicon etch[4]
Gas box—Horiba SEC-E40 (4)[2]
Process gases—O2, Ar, SF6, C4F6[2]
Controller and RF generator—RF Power Products RFPP I22050001 & I20050007[2]
Adaptive pressure controller—VAT PM-5[2]
Heater controller—Plasmatherm PC OS[2]
RF generator—RF Power Products RFPP RF5S & AM-5[2]
Turbo pump and controller—Leybold MAG 2000; Leybold MD 2000[2]
Vintage—01.06.1998[4]
Power—1.0 kW ICP RF package; 2 kW generator limited to 1.0 kW; 500 W RF bias[4]
Gas box lines—5 lines[4]
Additional process gases—CHF3, C4F8, SF6, Ar, O2[4]
Dry pump—Edwards ih80[4]
Load lock dry pump—Edwards nxds[4]
Load lock turbo pump—Leybold[4]
Turbo pump—Edwards STPA-1303CV[4]
Electrical—380VAC 3 phase[4]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]nanofab.utah.edunanofab.utah.edu
  2. [2]inventory listing
  3. [3]waferpedia.comwaferpedia.com
  4. [4]fabsurplus.comfabsurplus.com